Analytic model of Vth recovery in MISGate recess high electron mobility transistor after blocking voltage stress

René Escoffier (1) , Marc Orsatelli , Emmanuel Marcault , Julien Buckley (1) , Romain Gwoziecki (1) , Jérôme Biscarrat (1) , Laura Vauche (1) , Rémi Riat (1) , Jean-Yves Simon , Matthew Charles , Simon Ruel , Patricia Pimenta-Barros , Nicolas Posseme , Cyril Vannuffel , Roberto Modica , Ferdinando Iucolano , Véronique Sousa (1) , Julien Ranc

1 DCOS - Département Composants Silicium

Today wide band gap (WBG) material are consider as future brick allowing improvement of power transistor in order to reduce conduction lost as well as switching loses. Two kind of WBG are in concurrence SiC and GaN. For economical reason, several researches are particularly fo-cused on GaN on silicon. The main advantage of GaN is the capability to use a two-dimensional electron gaz (2Deg) as conduction layer but the transistors using this 2Deg are naturally normally on. Several solution are proposed to make it normally off and one of these is the usage of gate re-cess (allowing to cut physically the 2Deg). This work provide an analytical model of Vth evolution in MISGATE (metal insulator gate) GaN transistor on silicon. It has been shown that the main impact is due to charges close to the gate oxide (Al2O3 and AlN/AL2O3) interface and GaN charges. This model allows extracting traps energy levels from threshold voltage (Vth) re-covery curve in the time after a 650V stress. It has been possible to extract up to four different traps energies levels.

Domaines: Electronique

René Escoffier, Marc Orsatelli, Emmanuel Marcault, Julien Buckley, Romain Gwoziecki, et al.. Analytic model of Vth recovery in MISGate recess high electron mobility transistor after blocking voltage stress. MDPI , 2021, 15 (Energies 2022), pp.677. ⟨10.3390/en15030677⟩. ⟨cea-03714433⟩