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Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique

Abstract : The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$ technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut$^{TM}$ process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer, still not achieved to date.
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https://hal-cea.archives-ouvertes.fr/cea-03714349
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Submitted on : Tuesday, July 5, 2022 - 2:41:35 PM
Last modification on : Tuesday, August 2, 2022 - 3:10:28 AM

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Cédric Masante, Jon de Vecchy, Frédéric Mazen, Frederic Milesi, Léa Di Cioccio, et al.. Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique. Diamond and Related Materials, Elsevier, 2022, 126, pp.109085. ⟨10.1016/j.diamond.2022.109085⟩. ⟨cea-03714349⟩

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