Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique

Cédric Masante (1) , Jon de Vecchy (1) , Frédéric Mazen (1) , Frederic Milesi (1) , Léa Di Cioccio (1) , Julien Pernot (2) , Fernando Lloret (3) , Daniel Araujo (3) , José Carlos Pinero (3) , Névine Rochat (1) , Francois Pierre (1) , Florence Servant (1) , Julie Widiez (1)

1 DCOS - Département Composants Silicium
2 NEEL - SC2G - Semi-conducteurs à large bande interdite
3 UCA - Universidad de Cádiz = University of Cádiz

The effect of H$^+$ implantation and annealing of diamond (100) monocrystalline substrates has been studied by ToFSIMS, cathodoluminescence, transmission spectroscopy and TEM. Blistering conditions suitable for the Smart Cut$^{TM}$ technology have been identified in monocrystalline diamond, using two sets of hydrogen implantation and annealing. A first hydrogen implantation followed by a first annealing leads to amorphization of a buried layer without hydrogen exodiffusion. Blisters and exfoliations appear at the surface of the diamond samples after a second hydrogen implantation inside the pre-amorphized diamond layer and a final annealing, as evidenced by TEM and optical microscopy. Demonstration of hydrogen-induced blistering is a major step to adapt the Smart Cut$^{TM}$ process on diamond material. This process is compatible with wafer bonding before the second annealing and therefore open the way for thin diamond layer transfer, still not achieved to date.

Domaines: Matériaux; Electronique; Micro et nanotechnologies/Microélectronique

Cédric Masante, Jon de Vecchy, Frédéric Mazen, Frederic Milesi, Léa Di Cioccio, et al.. Hydrogen implantation-induced blistering in diamond : towards diamond layer transfer by the Smart CutTM technique. Diamond and Related Materials, 2022, 126, pp.109085. ⟨10.1016/j.diamond.2022.109085⟩. ⟨cea-03714349⟩