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Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Abstract : Ge-rich GeSbTe alloys allowed overcoming temperature limitations of Phase-Change Memory technology. In this paper, we present a thorough investigation of the structural evolution and crystallization process of these alloys as a function of increasing temperature of annealing. We highlight the progressive rearrangement of the structure towards the demixing of Ge and GeSbTe phases. In particular, we show the stability of Sb-Te units and the development of Ge-Te bonds around these features. We observe the formation of a transient GeSbTe phase, which is driven by crystallization phenomena, leading to a gradual diffusion and expulsion of Ge. Therefore, the system moves towards the complete separation of Ge and Ge2Sb2Te5 stable phases. Furthermore, we investigate the effect of N doping in Ge-rich GeSbTe, which induces the formation of Ge-N bonds. Such features are demonstrated to be responsible for a delayed structural reorganization to higher temperatures, thus affecting the entire process of crystallization and phase separation in the alloy.
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https://hal-cea.archives-ouvertes.fr/cea-03707285
Contributor : Gabriele Navarro Connect in order to contact the contributor
Submitted on : Tuesday, June 28, 2022 - 2:39:34 PM
Last modification on : Wednesday, June 29, 2022 - 3:48:24 AM

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L. Prazakova, E. Nolot, E. Martinez, F. Fillot, D. Rouchon, et al.. Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping. Journal of Applied Physics, American Institute of Physics, 2020, 128 (21), pp.215102. ⟨10.1063/5.0027734⟩. ⟨cea-03707285⟩

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