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A Self-referenced and regulated sensing solution for PCM with OTS selector

Abstract : Phase change memory (PCM) device associated with Ovonic Threshold Switch (OTS) selector is a proven solution to fill the gap between DRAM and mass storage. This technology also has the potential to be embedded in a high-end microcontroller. However, programming and reading phases efficiency is directly linked to the selector's leakage current and the sneak-path management. To tackle this challenge, we propose in this paper, a new sense amplifier able to generate an auto-reference taking into account leakage current of unselected cell, including a regulation loop to compensate voltage drop due to reading current sensing. This auto-referenced sense, built on the charge-sharing principle, is designed on a 28nm FDSOI technology and validated through extensive Monte-Carlo and corner cases simulations. From the simulation results, our sense amplifier is demonstrated to be robust for an ultra-large range of sneak-path current and consequently for a large range of memory array size, suitable for embedded memory in high-end microcontroller.
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https://hal-cea.archives-ouvertes.fr/cea-03605069
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Submitted on : Thursday, March 10, 2022 - 6:00:19 PM
Last modification on : Friday, April 1, 2022 - 3:52:59 AM

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Julien Gasquez, Bastien Giraud, Philippe Boivin, Yohann Moustapha-Rabault, Vincenzo Della Marca, et al.. A Self-referenced and regulated sensing solution for PCM with OTS selector. IFIP/IEEE 29th International Conference on Very Large Scale Integration (VLSI-SoC), 2021, 2021, pp.1-6. ⟨10.1109/VLSI-SoC53125.2021.9606969⟩. ⟨cea-03605069⟩

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