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Journal Articles Surface Science Spectra Year : 2022

High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation

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Abstract

Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution spectra of Si 1s, Si 2s, and Si 2p core-levels.
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cea-03564239 , version 1 (10-02-2022)

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation. Surface Science Spectra, 2022, 29 (1), pp.014005. ⟨10.1116/6.0001511⟩. ⟨cea-03564239⟩
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