High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation

Pierre-Marie Deleuze (1) , Kateryna Artyushkova (2) , Eugénie Martinez (1) , Olivier Renault (1)

1 DPFT - Département Plate-Forme Technologique
2 Physical Electronics

Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution spectra of Si 1s, Si 2s, and Si 2p core-levels.

Keywords: Si; HAXPES; Cr Kα

Domains: Materials Science [cond-mat.mtrl-sci]

Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation. Surface Science Spectra, 2022, 29 (1), pp.014005. ⟨10.1116/6.0001511⟩. ⟨cea-03564239⟩