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High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation

Abstract : Si (100) wafer was analyzed by high-energy photoelectron spectroscopy (HAXPES) using monochromatic Cr Kα radiation (5414.8 eV). The HAXPES spectra reported here include a survey scan and high-resolution spectra of Si 1s, Si 2s, and Si 2p core-levels.
Keywords : Si HAXPES Cr Kα
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Submitted on : Thursday, February 10, 2022 - 12:01:05 PM
Last modification on : Friday, February 18, 2022 - 3:21:11 AM
Long-term archiving on: : Wednesday, May 11, 2022 - 6:31:35 PM

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of Si(100) with Cr Kα excitation. Surface Science Spectra, American Vacuum Society, 2022, 29 (1), pp.014005. ⟨10.1116/6.0001511⟩. ⟨cea-03564239⟩

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