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High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation

Abstract : A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, C 1s, and O 1s core levels.
Keywords : SiC HAXPES Cr Kα
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https://hal-cea.archives-ouvertes.fr/cea-03564237
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Submitted on : Thursday, February 10, 2022 - 12:00:47 PM
Last modification on : Friday, February 18, 2022 - 3:21:10 AM
Long-term archiving on: : Wednesday, May 11, 2022 - 6:31:22 PM

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation. Surface Science Spectra, American Vacuum Society, 2022, 29 (1), pp.014006. ⟨10.1116/6.0001512⟩. ⟨cea-03564237⟩

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