High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation
Résumé
A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, C 1s, and O 1s core levels.
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