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Journal Articles Surface Science Spectra Year : 2022

High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation

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Abstract

A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, C 1s, and O 1s core levels.
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Dates and versions

cea-03564237 , version 1 (10-02-2022)

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation. Surface Science Spectra, 2022, 29 (1), pp.014006. ⟨10.1116/6.0001512⟩. ⟨cea-03564237⟩
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