High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation

Pierre-Marie Deleuze (1) , Kateryna Artyushkova (2) , Eugénie Martinez (1) , Olivier Renault (1)

1 DPFT - Département Plate-Forme Technologique
2 Physical Electronics

A C-terminated SiC wafer was analyzed by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. The data include a survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, C 1s, and O 1s core levels.

Keywords: SiC; HAXPES; Cr Kα

Domains: Materials Science [cond-mat.mtrl-sci]

Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of 6H-SiC wafer with Cr Kα excitation. Surface Science Spectra, 2022, 29 (1), pp.014006. ⟨10.1116/6.0001512⟩. ⟨cea-03564237⟩