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High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation

Abstract : Si3N4 thin film grown by low-pressure chemical vapor deposition was measured by high-energy photoelectron spectroscopy using monochromatic Cr Kα (5414.8 eV) radiation. A survey scan and high-resolution spectra of Si 1s, Si 2s, Si 2p, and N 1s are reported.
Keywords : Si3N4 HAXPES Cr Kα
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Submitted on : Thursday, February 10, 2022 - 12:00:15 PM
Last modification on : Friday, February 11, 2022 - 3:25:27 AM
Long-term archiving on: : Wednesday, May 11, 2022 - 6:31:12 PM

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Pierre-Marie Deleuze, Kateryna Artyushkova, Eugénie Martinez, Olivier Renault. High-energy photoelectron spectroscopy of Si3N4 thin film on Si with Cr Kα excitation. Surface Science Spectra, American Vacuum Society, 2022, 29 (1), pp.014007. ⟨10.1116/6.0001513⟩. ⟨cea-03564235⟩

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