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Binary linear ECCs optimized for bit inversion in memories with asymmetric error probabilities

Abstract : Many memory types are asymmetric with respect to the error vulnerability of stored 0's and 1's. For instance, DRAM, STT-MRAM and NAND flash memories may suffer from asymmetric error rates. A recently proposed errorprotection scheme consists in the inversion of the memory words with too many vulnerable values before they are stored in an asymmetric memory. In this paper, a method is proposed for the optimization of systematic binary linear block error-correcting codes in order to maximize their impact when combined with memory word inversion.
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https://hal-cea.archives-ouvertes.fr/cea-03469725
Contributor : Valentin Gherman Connect in order to contact the contributor
Submitted on : Tuesday, December 7, 2021 - 9:27:10 PM
Last modification on : Saturday, December 11, 2021 - 3:43:48 AM

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Valentin Gherman, Samuel Evain, Bastien Giraud. Binary linear ECCs optimized for bit inversion in memories with asymmetric error probabilities. DATE 2020 - 2020 Design, Automation & Test in Europe Conference & Exhibition, IEEE, Mar 2020, Grenoble, France. pp.298-301, ⟨10.23919/DATE48585.2020.9116531⟩. ⟨cea-03469725⟩

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