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Multilevel programming reliability in Si-doped GeSbTe for Storage Class Memory

Abstract : Phase-Change Memory (PCM) demonstrated to be a promising Non-Volatile Memory technology to address Storage Class Memory (SCM) applications that can be distinguished in memory-type and storage-type. In this work we show how αGeSbTe (αGST) alloy can address both SCM types, in particular using Si doping. Thanks to electrical characterization of 4 kb PCM arrays, supported by TEM analyses, we demonstrate how Si doping in αGST can lead to a huge improvement of MLC operations using a doublepulse protocol. This result, combined with an improved data retention, proves Si-doped αGST suitability for storage-type SCM, whereas high endurance and high speed in undoped αGST allows to target memory-type SCM.
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https://hal-cea.archives-ouvertes.fr/cea-03331482
Contributor : Gabriele Navarro <>
Submitted on : Wednesday, September 1, 2021 - 5:49:17 PM
Last modification on : Friday, September 3, 2021 - 3:09:08 AM

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G. Lama, M. Bernard, N. Bernier, G. Bourgeois, E. Nolot, et al.. Multilevel programming reliability in Si-doped GeSbTe for Storage Class Memory. IRPS 2021 - 2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩. ⟨cea-03331482⟩

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