Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

Véronique Ferlet-Cavrois (1) , Philippe Paillet (1) , Marc Gaillardin (1) , Damien Lambert (1) , Jacques Baggio (1) , J. Schwank (2) , G. Vizkelethy (2) , M. Shaneyfelt (2) , K. Hirose (3) , E. Blackmore (4) , O. Faynot (5) , C. Jahan (5) , L. Tosti (5)

1 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
2 SNL - Sandia National Laboratories [Albuquerque]
3 ISAS - Institute of Space and Astronautical Science
4 TRIUMF [Vancouver]
5 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Domains: Engineering Sciences [physics]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

Véronique Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, Jacques Baggio, et al.. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3242-3252. ⟨10.1109/TNS.2006.885111⟩. ⟨cea-03283689⟩