Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2006

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

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cea-03283689 , version 1 (12-07-2021)

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Véronique Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, Jacques Baggio, et al.. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3242-3252. ⟨10.1109/TNS.2006.885111⟩. ⟨cea-03283689⟩
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