Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs - CEA - Commissariat à l’énergie atomique et aux énergies alternatives Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2006

Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

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cea-03283689 , version 1 (12-07-2021)

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Véronique Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, Jacques Baggio, et al.. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs. IEEE Transactions on Nuclear Science, 2006, 53 (6), pp.3242-3252. ⟨10.1109/TNS.2006.885111⟩. ⟨cea-03283689⟩
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