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Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs

Véronique Ferlet-Cavrois 1 Philippe Paillet 1 Marc Gaillardin 1 Damien Lambert 1 Jacques Baggio 1 J. Schwank 2 G. Vizkelethy 2 M. Shaneyfelt 2 K. Hirose 3 E. Blackmore 4 O. Faynot 5 C. Jahan 5 L. Tosti 5 
1 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
2 SNL - Sandia National Laboratories [Albuquerque]
3 ISAS - Institute of Space and Astronautical Science
4 TRIUMF [Vancouver]
5 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
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https://hal-cea.archives-ouvertes.fr/cea-03283689
Contributor : Damien Lambert Connect in order to contact the contributor
Submitted on : Monday, July 12, 2021 - 10:16:14 AM
Last modification on : Friday, September 17, 2021 - 4:32:02 PM

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Véronique Ferlet-Cavrois, Philippe Paillet, Marc Gaillardin, Damien Lambert, Jacques Baggio, et al.. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2006, 53 (6), pp.3242-3252. ⟨10.1109/TNS.2006.885111⟩. ⟨cea-03283689⟩

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