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Journal Articles Philosophical Magazine Letters Year : 2021

Disorder induced in silicon carbide by heavy-ion irradiation

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Abstract

The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analyzed in relation to band-gap shrinkage and Urbach edge increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channeling spectroscopy is addressed by taking into account the point defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of the scattered light self-absorption due to damage build-up.
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cea-03186649 , version 1 (31-03-2021)

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Attribution - NonCommercial - NoDerivatives - CC BY 4.0

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Jean-Marc Costantini. Disorder induced in silicon carbide by heavy-ion irradiation. Philosophical Magazine Letters, 2021, https://doi.org/10.1080/09500839.2021.1884302. ⟨10.1080/09500839.2021.1884302⟩. ⟨cea-03186649⟩
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