Disorder induced in silicon carbide by heavy-ion irradiation

Jean-Marc Costantini (1)

1 SRMA - Service des Recherches Métallurgiques Appliquées

The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analyzed in relation to band-gap shrinkage and Urbach edge increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channeling spectroscopy is addressed by taking into account the point defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of the scattered light self-absorption due to damage build-up.

Mots clés: Radiation damage; Raman spectroscopy; SiC

Domaines: Matériaux

Jean-Marc Costantini. Disorder induced in silicon carbide by heavy-ion irradiation. Philosophical Magazine Letters, 2021, https://doi.org/10.1080/09500839.2021.1884302. ⟨10.1080/09500839.2021.1884302⟩. ⟨cea-03186649⟩