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Disorder induced in silicon carbide by heavy-ion irradiation

Abstract : The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analyzed in relation to band-gap shrinkage and Urbach edge increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channeling spectroscopy is addressed by taking into account the point defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of the scattered light self-absorption due to damage build-up.
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Submitted on : Wednesday, March 31, 2021 - 11:30:11 AM
Last modification on : Monday, December 13, 2021 - 9:14:43 AM
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Disorder induced in silicon ca...
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Jean-Marc Costantini. Disorder induced in silicon carbide by heavy-ion irradiation. Philosophical Magazine Letters, Taylor & Francis, 2021, ⟨10.1080/09500839.2021.1884302⟩. ⟨cea-03186649⟩



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