Disorder induced in silicon carbide by heavy-ion irradiation
Abstract
The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analyzed in relation to band-gap shrinkage and Urbach edge increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channeling spectroscopy is addressed by taking into account the point defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of the scattered light self-absorption due to damage build-up.
Domains
Material chemistry
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