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Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology

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https://hal-cea.archives-ouvertes.fr/cea-03167130
Contributor : Romeo Kom Kammeugne <>
Submitted on : Thursday, March 11, 2021 - 5:49:57 PM
Last modification on : Saturday, March 13, 2021 - 3:19:17 AM

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R. Kom Kammeugne, Romeo Kom Kammeugne, Charles Leroux, Jacques Cluzel, Laura Vauche, et al.. Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩. ⟨cea-03167130⟩

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