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Article Dans Une Revue Applied Physics Letters Année : 2021

Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

Résumé

The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 10$^5$ cm$^{−2}$ in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.
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Dates et versions

cea-03141091 , version 1 (15-02-2021)

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L. Mehmel, R. Issaoui, O. Brinza, A. Tallaire, V. Mille, et al.. Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates. Applied Physics Letters, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩. ⟨cea-03141091⟩
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