Skip to Main content Skip to Navigation
Journal articles

Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

L. Mehmel 1 R. Issaoui 1 O. Brinza 1 A. Tallaire 1, 2 V. Mille 1 Julien Delchevalrie 3 Samuel Saada 3 Jean-Charles Arnault 3, 4 F. Bénédic 1 J. Achard 1
3 LCD-LIST - Laboratoire Capteurs Diamant
DM2I - Département Métrologie Instrumentation & Information : DRT/LIST/DM2I
4 LEDNA - Laboratoire Edifices Nanométriques
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
Abstract : The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 10$^5$ cm$^{−2}$ in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.
Complete list of metadata
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 9:43:01 AM
Last modification on : Tuesday, January 4, 2022 - 6:08:52 AM
Long-term archiving on: : Sunday, May 16, 2021 - 6:28:37 PM


Publisher files allowed on an open archive



L. Mehmel, R. Issaoui, O. Brinza, A. Tallaire, V. Mille, et al.. Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates. Applied Physics Letters, American Institute of Physics, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩. ⟨cea-03141091⟩



Les métriques sont temporairement indisponibles