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Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

L. Mehmel 1 R. Issaoui 1 O. Brinza 1 A. Tallaire 1, 2 V. Mille 1 Julien Delchevalrie 3 Samuel Saada 3 Jean-Charles Arnault 3, 4 F. Bénédic 1 J. Achard 1
3 LCD-LIST - Laboratoire Capteurs Diamant
DM2I - Département Métrologie Instrumentation & Information : DRT/LIST/DM2I
4 LEDNA - Laboratoire Edifices Nanométriques
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
Abstract : The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 10$^5$ cm$^{−2}$ in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.
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https://hal-cea.archives-ouvertes.fr/cea-03141091
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Submitted on : Monday, February 15, 2021 - 9:43:01 AM
Last modification on : Friday, March 5, 2021 - 3:06:17 PM

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L. Mehmel, R. Issaoui, O. Brinza, A. Tallaire, V. Mille, et al.. Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates. Applied Physics Letters, American Institute of Physics, 2021, 118 (6), pp.061901. ⟨10.1063/5.0033741⟩. ⟨cea-03141091⟩

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