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Journal articles
Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates
Abstract : The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 10$^5$ cm$^{−2}$ in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.
https://hal-cea.archives-ouvertes.fr/cea-03141091
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 9:43:01 AM
Last modification on : Tuesday, January 4, 2022 - 6:08:52 AM
Long-term archiving on: : Sunday, May 16, 2021 - 6:28:37 PM
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Monday, February 15, 2021 - 9:43:01 AM
Last modification on : Tuesday, January 4, 2022 - 6:08:52 AM
Long-term archiving on: : Sunday, May 16, 2021 - 6:28:37 PM
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