Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates
Abstract
The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6 × 10$^5$ cm$^{−2}$ in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.
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