Impact of epitaxial strain on crystal field splitting of $\alpha$-Cr$_2$O$_3$(0001) thin films quantified by X-ray photoemission spectroscopy - Archive ouverte HAL Access content directly
Journal Articles Materials Research Letters Year : 2021

Impact of epitaxial strain on crystal field splitting of $\alpha$-Cr$_2$O$_3$(0001) thin films quantified by X-ray photoemission spectroscopy

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Abstract

The influence of epitaxial strain on the electronic structure of $\alpha$-Cr$_2$O$_3$(0001) thin films is probed by combining X-ray photoemission spectroscopy and crystal field multiplet calculations. In-plane lattice strain introduces distortions in the CrO$_6$ octahedron and splits the 3d orbital triplet t$_2g$ into a$_1$ + e orbitals. For relaxed thin films, the lines-shape of the Cr 2p core levels are well reproduced when the t$_2g$ subset is fully degenerated. In-plane tensile strain stabilizes a$_1$ with respect to e orbitals, whereas compressive strain destabilizes a$_1$ orbitals. Understanding these crystal field variations is essential for tuning the physical properties of $\alpha$-Cr$_2$O$_3$ thin films.
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cea-03135636 , version 1 (15-02-2021)

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Attribution - NonCommercial - CC BY 4.0

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Pâmella Vasconcelos Borges Pinho, Alain Chartier, Frédéric Miserque, Denis Menut, Jean-Baptiste Moussy. Impact of epitaxial strain on crystal field splitting of $\alpha$-Cr$_2$O$_3$(0001) thin films quantified by X-ray photoemission spectroscopy. Materials Research Letters, 2021, 9, pp.163-168. ⟨10.1080/21663831.2020.1863877⟩. ⟨cea-03135636⟩
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