Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2016

Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation

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N. Reyren
M. Bibes

Abstract

We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.
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Dates and versions

cea-03106328 , version 1 (11-01-2021)

Identifiers

Cite

S. Hurand, A. Jouan, C. Feuillet-Palma, G. Singh, E. Lesne, et al.. Top-gated field-effect LaAlO 3 /SrTiO 3 devices made by ion-irradiation. Applied Physics Letters, 2016, 108 (5), pp.052602. ⟨10.1063/1.4941672⟩. ⟨cea-03106328⟩
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