Semiconductor structure including a suspended membrane containing a central segment of structured thickness

Vincent Reboud; Alban Gassenq; S. Tardif; Vincent Calvo; Alexei Tchelnokov

Patents Year : 2020

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

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Vincent Reboud

Function : Author

Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Alban Gassenq

Function : Author
PersonId : 754914
IdHAL : alban-gassenq
ORCID : 0000-0003-0898-2646

Silicon Nanoelectronics Photonics and Structures

S. Tardif

Function : Author
PersonId : 171321
IdHAL : samuel-tardif
ORCID : 0000-0002-1786-8581
IdRef : 151370494

Nanostructures et Rayonnement Synchrotron

Vincent Calvo

Function : Author

Silicon Nanoelectronics Photonics and Structures

Alexei Tchelnokov

Function : Author

Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

Samuel Tardif : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-03096058

Submitted on : Monday, January 4, 2021-6:58:21 PM

Last modification on : Sunday, June 26, 2022-12:31:52 AM

Dates and versions

cea-03096058 , version 1 (04-01-2021)

Identifiers

HAL Id : cea-03096058 , version 1

Cite

Vincent Reboud, Alban Gassenq, S. Tardif, Vincent Calvo, Alexei Tchelnokov. Semiconductor structure including a suspended membrane containing a central segment of structured thickness. United States, Patent n° : US10666019B2. 2020. ⟨cea-03096058⟩

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

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