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Semiconductor structure including a suspended membrane containing a central segment of structured thickness

Vincent Reboud 1 Alban Gassenq 2 S. Tardif 3 Vincent Calvo 2 Alexei Tchelnokov 1 
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
3 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
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https://hal-cea.archives-ouvertes.fr/cea-03096058
Contributor : Samuel Tardif Connect in order to contact the contributor
Submitted on : Monday, January 4, 2021 - 6:58:21 PM
Last modification on : Sunday, June 26, 2022 - 12:31:52 AM

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  • HAL Id : cea-03096058, version 1

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CEA | UGA | DRT | CEA-DRF | LETI | IRIG | CEA-GRE | PHELIQS

Citation

Vincent Reboud, Alban Gassenq, S. Tardif, Vincent Calvo, Alexei Tchelnokov. Semiconductor structure including a suspended membrane containing a central segment of structured thickness. United States, Patent n° : US10666019B2. 2020. ⟨cea-03096058⟩

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