Correlation between strain and maximum lasing temperature in GeSn microbridges

Jeremie Chretien (1) , Nicolas Pauc (1) , Quang Minh Thai (1) , Francesco Armand Pilon (2, 3) , Lara Casiez (4) , Marvin Frauenrath (4) , Rami Khazaka (4) , Denis Rouchon (4) , Jerome Faist (3) , Hans Sigg (2) , Alexei Chelnokov (4) , Vincent Reboud (4) , S. Tardif (5) , Jean-Michel Hartmann (4) , Vincent Calvo (1)

1 SiNaps - Silicon Nanoelectronics Photonics and Structures
2 PSI - Paul Scherrer Institute
3 ETH Zürich - Eidgenössische Technische Hochschule - Swiss Federal Institute of Technology [Zürich]
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
5 NRS - Nanostructures et Rayonnement Synchrotron

Tensile strained GeSn lasers could be used as tunable infrared light sources in silicon photonics. We explore here the relationship between the uniaxial tensile strain applied to suspended microbridges and the maximum lasing temperature reached in GeSn 13% cavities.

Keywords: GeSn; laser; strain; tunability

Domains: Micro and nanotechnologies/Microelectronics; Materials Science [cond-mat.mtrl-sci]

Jeremie Chretien, Nicolas Pauc, Quang Minh Thai, Francesco Armand Pilon, Lara Casiez, et al.. Correlation between strain and maximum lasing temperature in GeSn microbridges. IPC 2020 - 2020 IEEE Photonics Conference, Sep 2020, Vancouver, Canada. pp.1-2, ⟨10.1109/IPC47351.2020.9252430⟩. ⟨cea-03096049⟩