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Heavy Ions Radiation Effects on 4kb Phase-Change Memory

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Abstract

In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on Ge$_2$Sb$_2$Te$_5$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).
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Dates and versions

cea-03086407 , version 1 (22-12-2020)

Identifiers

  • HAL Id : cea-03086407 , version 1

Cite

Anna Lisa Serra, Tobias Vogel, Gauthier Lefevre, Stefan Petzold, Nico Kaiser, et al.. Heavy Ions Radiation Effects on 4kb Phase-Change Memory. RADECS 2020, Oct 2020, Virtual Conference, France. ⟨cea-03086407⟩
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