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Heavy Ions Radiation Effects on 4kb Phase-Change Memory

Anna Lisa Serra 1 Tobias Vogel 2 Gauthier Lefevre 3 Stefan Petzold 2 Nico Kaiser 2 Guillaume Bourgeois 1 Marie-Claire Cyrille 1 Lambert Alff 2 Christina Trautmann 4 Christophe Vallée 3 Sylvain David 3 Christelle Charpin-Nicolle 1 Gabriele Navarro 1 Etienne Nowak 1 
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 Materials Science, Technische Universität Darmstadt
3 LTM - Laboratoire des technologies de la microélectronique
4 GSI - Helmholtz Centre for Heavy Ion Research
Abstract : In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on Ge$_2$Sb$_2$Te$_5$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).
Keywords : Radiation hardness radiation effects phase-change memory PCM Ge$_2$Sb$_2$Te$_5$ Ge-rich GeSbTe interfacial layer PCM
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-03086407
Contributor : Gabriele Navarro Connect in order to contact the contributor
Submitted on : Tuesday, December 22, 2020 - 4:03:58 PM
Last modification on : Saturday, April 2, 2022 - 3:34:58 AM

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  • HAL Id : cea-03086407, version 1

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Anna Lisa Serra, Tobias Vogel, Gauthier Lefevre, Stefan Petzold, Nico Kaiser, et al.. Heavy Ions Radiation Effects on 4kb Phase-Change Memory. RADECS 2020, Oct 2020, Virtual Conference, France. ⟨cea-03086407⟩

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