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Heavy Ions Radiation Effects on 4kb Phase-Change Memory

Abstract : In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on Ge$_2$Sb$_2$Te$_5$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).
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https://hal-cea.archives-ouvertes.fr/cea-03086407
Contributor : Gabriele Navarro <>
Submitted on : Tuesday, December 22, 2020 - 4:03:58 PM
Last modification on : Tuesday, January 5, 2021 - 3:27:41 AM

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  • HAL Id : cea-03086407, version 1

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CEA | CNRS

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Anna Lisa Serra, Tobias Vogel, Gauthier Lefevre, Stefan Petzold, Nico Kaiser, et al.. Heavy Ions Radiation Effects on 4kb Phase-Change Memory. RADECS 2020, Oct 2020, Virtual Conference, France. ⟨cea-03086407⟩

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