Heavy Ions Radiation Effects on 4kb Phase-Change Memory

Anna Lisa Serra (1) , Tobias Vogel (2) , Gauthier Lefevre (3) , Stefan Petzold (2) , Nico Kaiser (2) , Guillaume Bourgeois (1) , Marie-Claire Cyrille (1) , Lambert Alff (2) , Christina Trautmann (4) , Christophe Vallée (3) , Sylvain David (3) , Christelle Charpin-Nicolle (1) , Gabriele Navarro (1) , Etienne Nowak (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 Materials Science, Technische Universität Darmstadt
3 LTM - Laboratoire des technologies de la microélectronique
4 GSI - Helmholtz Centre for Heavy Ion Research

In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on Ge$_2$Sb$_2$Te$_5$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).

Keywords: Radiation hardness; radiation effects; phase-change memory; PCM; Ge$_2$Sb$_2$Te$_5$; Ge-rich GeSbTe; interfacial layer PCM

Domains: Micro and nanotechnologies/Microelectronics

Anna Lisa Serra, Tobias Vogel, Gauthier Lefevre, Stefan Petzold, Nico Kaiser, et al.. Heavy Ions Radiation Effects on 4kb Phase-Change Memory. RADECS 2020, Oct 2020, Virtual Conference, France. ⟨cea-03086407⟩