Artificial laminar oxide multiferroic magnetoelectric thin film structures
Résumé
Nanometric laminar two-dimensional artificial multiferroic oxide thin films can be elaborated using spinel ferrites and perovskite ferroelectrics like CoFe2O4 and BaTiO3. Such materials can retain their individual ferromagnetic or ferroelectric properties. In the thin epitaxial film regime a cross coupling of these properties is possible thanks to strain engineering. After introducing the concepts supporting artificial multiferroic laminar structures, the growth of strained BaTiO3 thin films and the growth of subsequent Co-ferrites layers will be detailed. With respect to the relative film thickness, a detailed understanding of the elastic behavior of these films will be proposed based on the characterization using several synchrotron radiation techniques including x-ray specular and off-specular diffraction, x-ray absorption spectroscopy, as well as x-ray magnetic circular dichroism.
