Skip to Main content Skip to Navigation
Conference papers

Impact of Bottom Electrode Integration on OxRAM Arrays Variability

Abstract : HfO$_2$-based OxRAMs with various metal stacks in the inferior VIA of bottom electrode were fabricated. We demonstrated for the first time that the metal stack of TiN PVD (physical vapour deposition), followed by an annealing step decreases the standard error of the forming voltage by 10% compared to the other variants. The related die-to-die and cell-tocell variability is greatly reduced along the wafer diameter and the LRS shows better control of the tail bits at 3$\sigma$ of the distribution. The number of failed operations over 1e4 cycles for 1k cells is reduced by a factor 3, reaching a BER of 8e-5. Finally, correlation of the cell reliability with the bottom via roughness is discussed.
Complete list of metadata

https://hal-cea.archives-ouvertes.fr/cea-03027403
Contributor : Nguyet Phuong Tran Connect in order to contact the contributor
Submitted on : Friday, November 27, 2020 - 10:22:12 AM
Last modification on : Tuesday, December 1, 2020 - 3:20:29 AM
Long-term archiving on: : Sunday, February 28, 2021 - 6:50:09 PM

File

EU006.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

N.-P. Tran, J. Sandrini, A. Persico, J.-F. Nodin, T. Magis, et al.. Impact of Bottom Electrode Integration on OxRAM Arrays Variability. VLSI-TSA - 2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩. ⟨cea-03027403⟩

Share

Metrics

Record views

71

Files downloads

111