Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices

Tran N.P.; Sandrini J.; Persico A.; Nodin J.F.; Magis T.; Crochemore R.; Castellani N.; Cyrille M.C.; Molas G.; Nowak E.

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Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices

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1

Tran N.P.

Function : Author

Commissariat à l'énergie atomique et aux énergies alternatives

Sandrini J.

Function : Author

Persico A.

Function : Author

Nodin J.F.

Function : Author

Magis T.

Function : Author

Crochemore R.

Function : Author

Castellani N.

Function : Author

Cyrille M.C.

Function : Author

Molas G.

Function : Author

Nowak E.

Function : Author

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Micro and nanotechnologies/Microelectronics

Nguyet Phuong TRAN : Connect in order to contact the contributor

https://hal-cea.archives-ouvertes.fr/cea-03022902

Submitted on : Wednesday, November 25, 2020-8:40:56 AM

Last modification on : Sunday, June 26, 2022-12:31:39 AM

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cea-03022902 , version 1 (25-11-2020)

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HAL Id : cea-03022902 , version 1

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Tran N.P., Sandrini J., Persico A., Nodin J.F., Magis T., et al.. Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices. 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. ⟨cea-03022902⟩

Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices

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