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Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices

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https://hal-cea.archives-ouvertes.fr/cea-03022902
Contributor : Nguyet Phuong Tran <>
Submitted on : Wednesday, November 25, 2020 - 8:40:56 AM
Last modification on : Wednesday, November 25, 2020 - 8:40:56 AM

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  • HAL Id : cea-03022902, version 1

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Tran N.P., Sandrini J., Persico A., Nodin J.F., Magis T., et al.. Impact of Bottom Electrode Integration on the variability of 4kb RRAM Matrices. 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan. ⟨cea-03022902⟩

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