Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne; C. Leroux; J. Cluzel; L. Vauche; C. Le Royer; R. Gwoziecki; J. Biscarrat; F. Gaillard; M. Charles; E. Bano; G. Ghibaudo

doi:10.1109/TED.2020.3015466

Journal articles

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne ¹ C. Leroux ¹ J. Cluzel ¹ L. Vauche ¹ C. Le Royer ¹ R. Gwoziecki ¹ J. Biscarrat ¹ F. Gaillard ¹ M. Charles ¹ E. Bano ² G. Ghibaudo ²

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

Document type :

Journal articles

Domain :

Engineering Sciences [physics]

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-cea.archives-ouvertes.fr/cea-02972351
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Submitted on : Tuesday, October 20, 2020 - 12:52:00 PM
Last modification on : Sunday, June 26, 2022 - 12:31:42 AM

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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