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Journal Articles IEEE Transactions on Electron Devices Year : 2020

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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cea-02972351 , version 1 (20-10-2020)

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R. Kom Kammeugne, C. Leroux, J. Cluzel, L. Vauche, C. Le Royer, et al.. Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method. IEEE Transactions on Electron Devices, In press, pp.1-5. ⟨10.1109/TED.2020.3015466⟩. ⟨cea-02972351⟩
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