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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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https://hal-cea.archives-ouvertes.fr/cea-02972351
Contributor : Romeo Kom Kammeugne <>
Submitted on : Tuesday, October 20, 2020 - 12:52:00 PM
Last modification on : Tuesday, November 24, 2020 - 4:00:19 PM

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R. Kom Kammeugne, C. Leroux, J. Cluzel, L. Vauche, C. Le Royer, et al.. Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, In press, pp.1-5. ⟨10.1109/TED.2020.3015466⟩. ⟨cea-02972351⟩

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