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Very High Brightness, High Resolution CMOS Driving Circuit for Microdisplay in Augmented Reality

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Abstract

In augmented reality applications, high brightness at high resolution is crucial to guarantee a good user experience. Explorations on efficient light sources have already been undertaken, and GaN µLEDs tend to be a good candidate. Nevertheless, micro-display driving circuits usually do not provide sufficient luminance level to offer good contrast against ambient light. We report the design and fabrication of a GaN LED microdisplay driving circuit enabling, to our knowledge, the highest brightness for such a pixel pitch and resolution. The driving circuit was designed in a 0.18µm CMOS process with 1640x1033 resolution. Each LED is controlled individually by a CMOS pixel of 9.5µm pitch. A monochrome green microdisplay enables more than WSXGA resolution and can reach 3.8MCd/m² for a fully ON micro-LED array.
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Dates and versions

cea-02953371 , version 1 (30-09-2020)

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Margaux Vigier, Thomas Pilloix, Bertrand Dupont, Guillaume Moritz. Very High Brightness, High Resolution CMOS Driving Circuit for Microdisplay in Augmented Reality. MWSCAS 2020 - IEEE 63rd International Midwest Symposium on Circuits and Systems, Aug 2020, Springfield, United States. pp.876-879, ⟨10.1109/MWSCAS48704.2020.9184480⟩. ⟨cea-02953371⟩
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