InGaN/GaN µLED SPICE modelling with size-dependent ABC model integration

Anis Daami (1, 2) , François Olivier (1, 2)

1 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
2 DACLE-LETI - Département d'Architectures, Conception et Logiciels Embarqués-LETI

The need of high brightness micro-displays in portable applications dedicated to mixed and/or virtual reality has drawn an important research wave on InGaN/GaN based micro-sized light emitting diodes (µLEDs). We propose to use a SPICE modelling technique to describe and simulate the electro-optical behavior of the µLED. A sub-circuit portrayal of the whole device will be used to describe current-voltage behavior and the optical power performance of the device based on the ABC model. We suggest an innovative method to derive instantaneously the carrier concentration from the simulated electrical current in order to determine the µLED quantum efficiency. In a second step, a statistical approach is also added into the SPICE model in order to apprehend the spread on experimental data. This µLED SPICE modelling approach is very important to allow the design of robust pixel driving circuits.

Mots clés: quantum efficiency; ABC model; SPICE simulations; µLED; InGaN/GaN

Domaines: Sciences de l'ingénieur [physics]

Anis Daami, François Olivier. InGaN/GaN µLED SPICE modelling with size-dependent ABC model integration. Physics and Simulation of Optoelectronic Devices, Feb 2019, San Francisco, United States. pp.13, ⟨10.1117/12.2509382⟩. ⟨cea-02941417v2⟩