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Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability

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Abstract

In this paper, we investigate an innovative Ovonic Threshold Switching Selector (OTS) based on Multilayer structure (ML). Thanks to physico-chemical analysis and electrical characterization we show how MLs properties and structure can be tuned thanks to the engineering of each individual layer stoichiometry, thickness and interfaces. Ge/N-doped SbSe-based MLs OTS are analyzed by FTIR and Raman spectroscopy revealing the structural features present in the as-deposited materials and the strong interaction among individual layers at interfaces. We demonstrate the improved variability control of electrical parameters wrt standard OTS achieved by co-sputtering technique, and the high endurance capability of MLs OTS up to more than 2·10$^9$ cycles with stable nA leakage current. Moreover, we show how Ge-N bonds play a huge role on OTS thermal stability at 400° C and how they can be tuned more easily in ML OTS. These developments pave the way towards a new class of OTS materials and their engineering, ensuring high temperature stability and best tuning of electrical performances.
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Dates and versions

cea-02930899 , version 1 (04-09-2020)

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Cite

C. Laguna, N. Castellani, M. Bernard, N. Rochat, D. Rouchon, et al.. Innovative Multilayer OTS Selectors for Performance Tuning and Improved Reliability. IMW 2020 - 2020 IEEE International Memory Workshop, May 2020, Dresde, Germany. pp.1-4, ⟨10.1109/IMW48823.2020.9108130⟩. ⟨cea-02930899⟩
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