Evaluation of III-V/Si Multi-Junction Solar Cells Potential for Space

Romain Cariou (1) , Karim Medjoubi (1) , Laura Vauche (1) , Elias Veinberg-Vidal (1) , Seonyong Park (2) , Jérémie Lefèvre (2) , Mathieu Baudrit (1) , Philippe Voarino (1) , Pierre Mur (1) , Bruno Boizot (2)

1 INES - Institut National de L'Energie Solaire
2 LSI - Laboratoire des Solides Irradiés

Hybrid III-V/Si multi-junction solar cells, which combine efficient III-V top cells with a silicon bottom cell, the most wide-spread photovoltaic material, offer great opportunities. Recent advances in this field have shown that mechanically stacked or wafer bonded III-V/Si can reach similar AM1.5g efficiencies than the standard GaInP/GaAs/Ge space triplejunction solar cells. In this study, we review the potential of this new hybrid III-V/Si cell technology for space applications. The first experimental results of wafer bonded 2-terminal GaInP/GaAs/Si solar cell electron irradiation will be presented. The BOL and EOL (1 MeV electrons) performances will be characterized under AM0 spectrum, and the radiation tolerance will be compared with single-junction silicon and standard Ge based triple-junction.

Domains: Engineering Sciences [physics]

Romain Cariou, Karim Medjoubi, Laura Vauche, Elias Veinberg-Vidal, Seonyong Park, et al.. Evaluation of III-V/Si Multi-Junction Solar Cells Potential for Space. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, United States. pp.3335-3338, ⟨10.1109/PVSC.2018.8547773⟩. ⟨cea-02912324⟩