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Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices

Abstract : Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and compounds ofer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb$_w$S$_x$Se$_y$Te$_z$ chalcogenide thin flms one can signifcantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin flms is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted to get a description of their amorphous structure. For the purpose of applications, their thermal stability upon annealing is also evaluated. We demonstrate that depending on the GeSb$_w$S$_x$Se$_y$Te$_z$ flm composition a trade-of between a high transparency in near- or mid-infrared ranges, strong nonlinearity and good thermal stability can be found in order to use such materials for applications compatible with the standard CMOS integration processes of microelectronics and photonics.
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Contributor : Jean-Baptiste Jager Connect in order to contact the contributor
Submitted on : Thursday, June 3, 2021 - 4:18:32 PM
Last modification on : Wednesday, November 3, 2021 - 7:42:00 AM
Long-term archiving on: : Saturday, September 4, 2021 - 7:08:58 PM


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J.-B. Dory, C. Castro-Chavarria, A. Verdy, J.-B. Jager, M. Bernard, et al.. Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices. Scientific Reports, Nature Publishing Group, 2020, 10, pp.11894. ⟨10.1038/s41598-020-67377-9⟩. ⟨cea-02903381⟩



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