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Journal articles
Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices
Abstract : Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and
compounds ofer tremendous opportunities of applications, in particular in near and mid-infrared
range. This spectral range is for instance of high interest for photonics or optical sensors. Using
co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool,
we show how by modifying the amorphous structure of GeSb$_w$S$_x$Se$_y$Te$_z$ chalcogenide thin flms
one can signifcantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic
ellipsometry data collected on the as-deposited chalcogenide thin flms is used to evaluate their linear
and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted
to get a description of their amorphous structure. For the purpose of applications, their thermal
stability upon annealing is also evaluated. We demonstrate that depending on the GeSb$_w$S$_x$Se$_y$Te$_z$
flm composition a trade-of between a high transparency in near- or mid-infrared ranges, strong
nonlinearity and good thermal stability can be found in order to use such materials for applications
compatible with the standard CMOS integration processes of microelectronics and photonics.
https://hal-cea.archives-ouvertes.fr/cea-02903381
Contributor : Jean-Baptiste Jager <>
Submitted on : Thursday, June 3, 2021 - 4:18:32 PM
Last modification on : Thursday, July 22, 2021 - 9:42:05 AM
Contributor : Jean-Baptiste Jager <>
Submitted on : Thursday, June 3, 2021 - 4:18:32 PM
Last modification on : Thursday, July 22, 2021 - 9:42:05 AM
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s41598-020-67377-9.pdf
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