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Hybrid-RRAM towards next generation of non-volatile memory: Coupling of oxygen vacancies and metal ions

Gilbert Sassine 1, * Cecile Nail 1 Philippe Blaise 1 Benoit Sklenard 1 Mathieu Bernard 1 Rémy Gassilloud 1 Aurélie Marty 1 Marc Veillerot 1 Christophe Vallee 2 Etienne Nowak 1 Gabriel Molas 1, *
* Corresponding author
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LTM - Laboratoire des technologies de la microélectronique
Abstract : In this paper, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide-based CBRAM (Hybrid RRAM) performances is investigated. To this aim, several RRAM technologies are studied using various resistive layers and top electrodes. Material analyses allow to highlight the hybrid aspect of HRRAM conductive filament. Density functional theory simulations are used to extract microscopic features and highlight differences from a material point of view. Integrated RRAM technology performances such as window margin, endurance and retention are then measured to analyze copper and oxygen vacancy influence on device characteristics. A new RRAM classification correlating filament composition and memory performances is proposed.
Keywords : nano-device atomistic simulations reliability hybrid rram
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https://hal-cea.archives-ouvertes.fr/cea-02885888
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Submitted on : Wednesday, July 1, 2020 - 10:02:58 AM
Last modification on : Monday, February 14, 2022 - 1:43:58 PM
Long-term archiving on: : Wednesday, September 23, 2020 - 2:32:03 PM

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Gilbert Sassine, Cecile Nail, Philippe Blaise, Benoit Sklenard, Mathieu Bernard, et al.. Hybrid-RRAM towards next generation of non-volatile memory: Coupling of oxygen vacancies and metal ions. Advanced Electronic Materials, Wiley, 2018, 5 (2), pp.1800658. ⟨10.1002/aelm.201800658⟩. ⟨cea-02885888⟩

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