Skip to Main content Skip to Navigation
Journal articles

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Complete list of metadata

https://hal-cea.archives-ouvertes.fr/cea-02624333
Contributor : Jean-Baptiste Jager <>
Submitted on : Tuesday, May 26, 2020 - 11:19:15 AM
Last modification on : Thursday, July 22, 2021 - 9:42:05 AM

Links full text

Identifiers

Collections

CEA | EHESS | CELIA | DAM | DRT | LETI | IRIG | CNRS | CEA-GRE | UGA | PHELIQS

Citation

Pierre Noé, Anthonin Verdy, Francesco D’acapito, Jean-Baptiste Dory, Mathieu Bernard, et al.. Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed. Science Advances , American Association for the Advancement of Science (AAAS), 2020, 6 (9), pp.eaay2830. ⟨10.1126/sciadv.aay2830⟩. ⟨cea-02624333⟩

Share

Metrics

Record views

86