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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

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https://hal-cea.archives-ouvertes.fr/cea-02624333
Contributor : Jean-Baptiste Jager <>
Submitted on : Tuesday, May 26, 2020 - 11:19:15 AM
Last modification on : Friday, July 17, 2020 - 8:24:29 AM

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Pierre Noé, Anthonin Verdy, Francesco D’acapito, Jean-Baptiste Dory, Mathieu Bernard, et al.. Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed. Science Advances , American Association for the Advancement of Science (AAAS), 2020, 6 (9), pp.eaay2830. ⟨10.1126/sciadv.aay2830⟩. ⟨cea-02624333⟩

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