R. Kopecek and &. Libal, The status and future of industrial n-type silicon solar cells, Photovoltaics International, 2013.

B. Sopori, P. Basnyat, S. Devayajanam, S. Shet, V. Mehta et al., Understanding light-induced degradation of c-Si solar cells, 38th IEEE Photovoltaic Specialists Conference, pp.1115-1120, 2012.

D. J. Macdonald-&-l and . Geerligs, Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon, Applied Physics Letters, vol.85, issue.18, pp.4061-4063, 2004.

S. Gall, A. Lanterne, S. Manuel, V. Sanzone, R. Cabal et al., High efficient Industrial n-type Technology: From cell to module" proceeding of the 28th EU PVSEC, 2013.

A. Rohatgi, D. L. Meier, B. Mcpherson, Y. Ok, A. D. Upadhyaya et al., High-throughput ion-implantation for lowcost high-efficiency silicon solar cells, Energy Procedia, vol.15, pp.10-19, 2012.

T. S. Böscke, D. Kania, C. Schöllhorn, D. Stichtenoth, A. Helbig et al., Fully Ion Implanted and Coactivated Industrial n-Type Cells With 20.5% Efficiency" Proceeding of the 39th IEEE PVSC, 2013.

Y. Tao, Y. , O. , F. Zimbardi, A. D. Upadhyaya et al., Fully ion-implanted and screen-printed 20.2% efficient front junction silicon cells on 239cm2 n-type Cz substrate" Proceeding of the 39th IEEE PVSC, 2013.

R. Müller, J. Benick, N. Bateman, J. Schön, C. Reichel et al., Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screen-printed contacts, Solar Energy Materials & Solar Cells, vol.120, pp.431-435, 2014.

H. H. Berger, Model for contacts to planar devices, J. Eletrochem. Soc, vol.119, issue.4, pp.507-514, 1972.

A. Lanterne, Diffused and Implanted Boron Emitter toward High Efficiency N-type PERT Solar Cells" presented to the 3th nPV workshop, 2013.

D. Pysch, A. Mette, and . Glunz, Solar Energy Materials & Solar Cells, vol.91, pp.1698-1706, 2007.