Electronically activated boron-oxygen-related recombination centers in crystalline silicon, Journal of Applied Physics, vol.99, p.13701, 2006. ,
Understanding Light-Induced Degradation of c-Si Solar Cells, Proc. 38th IEEE PVSC, pp.1115-1120, 2010. ,
Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon, Appl. Phys. Lett, vol.85, issue.18, p.4063, 2004. ,
5% efficient n-type Si solar cells made in production, Proc. 26th EuPVSEC and Exhibition, pp.1144-1147, 2011. ,
, Energy Procedia, vol.8, p.514, 2011.
N-Type, Ion-Implanted Silicon Solar Cells andModules, IEEE Journal of Photovoltaics, vol.1, issue.2, p.129, 2011. ,
, Proceedings of the 25th EuPVSEC/WCPEC-5, pp.1169-1173, 2010.
, Proc. 38th IEEE PVSC, 2012.
Effect of high-temperature annealing on ionimplanted silicon solar cells, International Journal of Photoenergy, 2012. ,
, Proc. 27th EuPVSEC, p.1897, 1900.
, Solar Energy Materials & Solar Cells, vol.91, 2007.