Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells

Thomas Michel (1, 2) , Jerome Le Perchec (3, 4) , Adeline Lanterne (3, 4) , Rémi Monna (3, 4) , Frank Torregrosa (2) , Laurent Roux (2) , Mireille Commandre (1)

1 FRESNEL - Institut FRESNEL
2 IBS - Ion Beam Services
3 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
4 INES - Institut National de L'Energie Solaire

Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH$_3$ plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl$_3$ diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion effi-ciencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser.

Keywords: Ion implantation; Plasma-immersion; Crystalline silicon; Solar cell; Photovoltaics

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Electric power; Materials; Optics / Photonic

Thomas Michel, Jerome Le Perchec, Adeline Lanterne, Rémi Monna, Frank Torregrosa, et al.. Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells. Solar Energy Materials and Solar Cells, 2015, 133, pp.194-200. ⟨10.1016/j.solmat.2014.11.014⟩. ⟨cea-02570721⟩