 |
Journal articles
Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells
Abstract : Ion Beam Services (IBS) has developed processes dedicated to silicon-based solar cell manufacturing using a plasma-immersion ion implantation equipment. It enables the realization of various doping profiles for phosphorus-doped emitters which fit the requirements of high-efficiency solar cells. PH$_3$ plasma-implanted emitters are chemically, physically and electrically characterized to demonstrate their excellent quality. Those emitters are then integrated into a low cost p-type monocrystalline silicon solar cell manufacturing line from the National Solar Energy Institute (INES) in order to be compared with usual POCl$_3$ diffusion. Starting from a basic process flow with blanket emitter and conventional full-area aluminum back-surface field, plasma-immersion implanted emitters enable to raise conversion effi-ciencies above 19.1%. Thanks to an optimized double layer anti-reflective coating, a 19.4% champion cell has been achieved. Depending on different plasma process parameters, lightly doped emitters are then engineered aiming to study doping modulation using a dedicated laser.
Cited literature [18 references]
https://hal-cea.archives-ouvertes.fr/cea-02570721
Contributor : Adeline Lanterne <>
Submitted on : Tuesday, May 12, 2020 - 12:07:15 PM
Last modification on : Thursday, April 1, 2021 - 4:13:08 PM
Contributor : Adeline Lanterne <>
Submitted on : Tuesday, May 12, 2020 - 12:07:15 PM
Last modification on : Thursday, April 1, 2021 - 4:13:08 PM
File
Michel-2015-SolMat- Phosphorus...
Files produced by the author(s)