D. Macdonald and L. J. Geerligs, Recombination activity of interstitial iron and other transition metal point defects in p and n-type crystalline silicon, Appl. Phys. Lett, vol.85, issue.18, pp.4061-4063, 2004.

J. E. Cotter, p-Type vs. n-type silicon wafers: prospects for high-efficiency, commercial silicon solar cells, Proceedings of the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, 2005.

, Reverse Bias Electroluminescence mappings, before and after cell edges removal by laser ablation

L. J. Geerligs and D. Macdonald, Base doping and recombination activity of impurities in crystalline silicon solar cells, Prog. Photovolt.: Res. Appl, vol.12, issue.4, pp.309-316, 2004.

J. Zhao, High efficiency PERT cells on n-type silicon substrates, Proceedings of the 29th IEEE, p.218, 2002.

T. S. Boscke, Fully ion implanted and coactivated industrial n-type cells with 20.5% efficiency, IEEE J. Photovolt, vol.99, pp.2156-3381, 2013.

A. Lanterne, High efficiency fully implanted and co-annealed bifacial ntype solar cells, Proceedings of the 3rd SiliconPV, vol.38, pp.283-288, 2013.
URL : https://hal.archives-ouvertes.fr/cea-02570734

R. Keding, Silicon doping performed by different diffusion sources aiming co-diffusion, Proceedings of the 27th EU PVSEC, pp.1906-1911, 2012.

B. Bazer-bachi, Co-diffusion from boron doped oxide and POCl, Proceedings of the 26th EU PVSEC, vol.3, pp.1155-1159, 2011.

N. Weheier, G. Schraps, H. Wagner, B. Lim, N. Harder et al., Borondoped PECVD silicon oxides as diffusion sources for simplified high-efficiency solar cell fabrication, Proceedings of the 28th EU PVSEC, 2013.

V. Cazcarra and P. Zunino, Influence of oxygen on silicon resistivity, J. Appl. Phys, vol.51, issue.8, pp.4206-4211, 1980.

J. Veirman, S. Dubois, N. Enjalbert, J. P. Garandet, D. R. Heslinga et al., Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation, Solid State Electron, vol.54, p.671, 2010.

J. Singer, 2d TCAD simulation of high efficiency n-type c-Si solar cell: correlation between the screen-printing metallization and the loss in cell Voc, Proceedings of the 27th EU PVSEC, 2012.

M. C. Alonso-garcia, J. M. Ruiz, and F. Chenlo, Experimental study of mismatch and shading effects in the I-V characteristic of a photovoltaic module, Sol. Energy Mater. Sol. Cells, vol.90, issue.3, pp.329-340, 2006.

W. Kwapil, Diode breakdown related to recombination active defects in block-cast multicrystalline silicon solar cells, J. Appl. Phys, vol.106, issue.6, pp.63530-63531, 2009.

F. Dauzou, R. Cabal, and Y. Veschetti, Electrical behaviour of n-type silicon solar cells under reverse bias: influence of the manufacturing process, Sol. Energy Mater. Sol. Cells, vol.104, pp.175-179, 2012.

S. M. Sze and K. N. Kwok, Physics of Semiconductor Devices, 2007107.