B. Min, M. Muller, and H. Wagner, A roadmap toward 24% efficient PERC solar cells in industrial mass production, IEEE J Photovoltaics, vol.7, issue.6, pp.1541-1550, 2017.

, International Technology Roadmap for Photovoltaic (ITRPV) 2016 results including maturity report, www.itrpv.net, 2017.

F. Buchholz, P. Preis, H. Chu, J. Lossen, and E. Wefringhaus, Progress in the development of industrial nPERT cells, Energy Procedia, vol.124, pp.649-656, 2017.

K. Ryu, E. Cho, A. Rohatgi, and Y. Ok, Process development and comparison of various boron emitter technologies for high-efficiency (~21%) ntype silicon solar cells, Prog Photovolt Res Appl, vol.24, issue.8, pp.1109-1115, 2016.

A. Das, K. Ryu, and A. Rohatgi, 20% efficient screen-printed n-type solar cells using a spin-on source and thermal oxide/silicon nitride passivation, IEEE J Photovoltaics, vol.1, issue.2, pp.146-152, 2011.

B. Lim, T. Brendemuhl, T. Dullweber, and R. Brendel, Loss analysis of n-type passivated emitter rear totally diffused back-junction silicon solar cells with efficiencies up to 21.2%, IEEE J Photovoltaics, vol.6, issue.2, pp.447-453, 2016.

F. Kiefer, J. Krügener, and F. Heinemeyer, Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters, Sol Energy Mater Sol Cells, vol.157, pp.326-330, 2016.

Q. Wei, S. Zhang, S. Yu, J. Lu, W. Lian et al., High efficiency n-PERT solar cells by B/P co-diffusion method, Energy Procedia, vol.124, pp.700-705, 2017.

K. Ryu, K. Madani, A. Rohatgi, and Y. W. Ok, High efficiency screen-printed ntype silicon solar cell using co-diffusion of APCVD boron emitter and POCl3 back surface field, Curr Appl Phys, vol.18, issue.2, pp.231-235, 2018.

R. J. Low, A. Gupta, and N. Bateman, High efficiency selective emitter enabled through patterned ion implantation," 35th IEEE Photovolt, pp.1440-1445, 2010.

A. Rohatgi, D. L. Meier, and B. Mcpherson, High-throughput ionimplantation for low-cost high-efficiency silicon solar cells, Energy Procedia, vol.15, pp.10-19, 2012.

J. Krügener, R. Peibst, and E. Bugiel, Ion implantation of boric molecules for silicon solar cells, Sol Energy Mater Sol Cells, vol.142, pp.12-17, 2015.

M. Aboy, I. Santos, L. Pelaz, L. A. Marqués, and P. López, Modeling of defects, dopant diffusion and clustering in silicon, J Comput Electron, vol.13, issue.1, pp.40-58, 2014.

M. Raghuwanshi, A. Lanterne, and J. Le-perchec, Influence of boron clustering on the emitter quality of implanted silicon solar cells: an atom probe tomography study, Prog Photovoltaics Res Appl, vol.23, issue.12, pp.1724-1733, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01929136

R. Müller, J. Benick, and N. Bateman, Evaluation of implantation annealing for highly-doped selective boron emitters suitable for screenprinted contacts, Sol Energy Mater Sol Cells, vol.120, pp.431-435, 2014.

R. Müller, A. Moldovan, C. Schiller, and J. Benick, Defect removal after low temperature annealing of boron implantations by emitter etch-back for silicon solar cells, Phys Status Solidi-Rapid Res Lett, vol.9, issue.1, pp.32-35, 2015.

T. Desrues, T. Michel, and J. F. Lerat, High quality industrial phosphorus emitter doping obtained with innovative plasma immersion ion implantation (PIII) processes, Proceeding 33rd Eur. Photovolt. Sol. Energy Conf. Exhib. Amsterdam, pp.960-962, 2017.

T. Michel, J. Le-perchec, and A. Lanterne, Phosphorus emitter engineering by plasma-immersion ion implantation for c-Si solar cells, Sol Energy Mater Sol Cells, vol.133, pp.194-200, 2015.
URL : https://hal.archives-ouvertes.fr/cea-02570721

A. Kimmerle, P. Rothhardt, A. Wolf, and R. A. Sinton, Increased reliability for J 0 -analysis by QSSPC, Energy Procedia, vol.55, pp.101-106, 2014.

A. Richter, S. W. Glunz, F. Werner, J. Schmidt, and A. Cuevas, Improved quantitative description of Auger recombination in crystalline silicon, Phys Rev B, vol.86, issue.16, p.165202, 2012.

A. Schenk, Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation, J Appl Phys, vol.84, issue.7, p.3684, 2013.

G. K. Reeves and H. B. Harrison, Obtaining the specific contact resistance from transmission line model measurements, IEEE Electron Device Lett, vol.3, issue.5, pp.111-113, 1982.

D. Salvador, D. Napolitani, E. Bisognin, and G. , Dissolution kinetics of B clusters in crystalline Si, Mater Sci Eng B Solid-State Mater Adv Technol, pp.32-38, 2005.

D. Nobili, Properties of silicon, EMIS Datareviews Ser, issue.4, pp.384-385, 1988.

P. Packan, S. Thompson, and E. Andideh, Modeling solid source boron diffusion for advanced transistor applications, IEDM Tech. Dig, pp.505-508, 1998.

A. Lanterne, S. Gall, and Y. Veschetti, High efficiency fully implanted and co-annealed bifacial n-type solar cells, Energy Procedia, vol.38, pp.283-288, 2013.
URL : https://hal.archives-ouvertes.fr/cea-02570734

&. Pv-lighthouse, , 2018.

A. Richter, S. W. Glunz, F. Werner, J. Schmidt, A. Cuevas et al., Plasma-immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing, Phys Rev B-Condens Matter Mater Phys, vol.86, issue.16, pp.1-11, 2012.