Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition, Journal of Materials Chemistry C, vol.2, issue.15, p.2692, 2014. ,
Phosphor-converted white light from blue-emitting InGaN microrod LEDs, physica status solidi (a), vol.213, issue.6, pp.1577-1584, 2016. ,
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers, Nature Materials, vol.7, issue.9, pp.701-706, 2008. ,
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications, Nanoscale Research Letters, vol.8, issue.1, pp.1-5, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00854179
Self-assembled growth of catalyst-free GaN wires by metal?organic vapour phase epitaxy, Nanotechnology, vol.21, issue.1, p.015602, 2009. ,
URL : https://hal.archives-ouvertes.fr/hal-00999293
Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties, Journal of Applied Physics, vol.115, issue.15, p.153504, 2014. ,
Threading defect elimination in GaN nanowires, Journal of Materials Research, vol.26, issue.17, pp.2293-2298, 2011. ,
Threading defect elimination in GaN nanowires, Journal of Materials Research, vol.26, issue.17, pp.2293-2298, 2011. ,
Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array, Optics Express, vol.22, issue.S7, p.A1799, 2014. ,
Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors, ACS Photonics, vol.3, issue.4, pp.597-603, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01320610
Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires, Nano Letters, vol.15, issue.10, pp.6958-6964, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01252043
Flexible Photodiodes Based on Nitride Core/Shell p?n Junction Nanowires, ACS Applied Materials & Interfaces, vol.8, issue.39, pp.26198-26206, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01390933
Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes, APL Materials, vol.2, issue.9, p.092512, 2014. ,
Electrically Injected GHz-Class GaN/InGaN Core?Shell Nanowire-Based ?LEDs: Carrier Dynamics and Nanoscale Homogeneity, ACS Photonics, vol.6, issue.7, pp.1618-1625, 2019. ,
Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes, Japanese Journal of Applied Physics, vol.55, issue.5S, p.05FJ09, 2016. ,
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires, Nanoscale, vol.11, issue.40, pp.18746-18757, 2019. ,
Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires, Nanophotonics, vol.9, issue.1, pp.101-111, 2019. ,
Reduction of reverse-leakage current in selective-area-grown GaN-based core-shell nanostructure LEDs using AlGaN layers, physica status solidi (a), vol.214, issue.5, p.1600776, 2016. ,
Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes, Scientific Reports, vol.8, issue.1, pp.1-11, 2018. ,
Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, p.25, 2016. ,
Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, p.97680, 2016. ,
Effect of superlattice on light output power of InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities, physica status solidi (c), vol.13, issue.5-6, pp.270-273, 2016. ,
Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells, Physica E: Low-dimensional Systems and Nanostructures, vol.76, pp.1-5, 2016. ,
A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures, physica status solidi (b), vol.252, issue.5, pp.866-872, 2014. ,
A Study of the Inclusion of Prelayers in InGaN/GaN Single-and Multiple-Quantum-Well Structures. Phys. Status Solidi, vol.252, pp.866-872, 2015. ,
High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers, Applied Physics Letters, vol.85, issue.15, pp.3089-3091, 2004. ,
Electroluminescence efficiency of blue InGaN?GaN quantum-well diodes with and without an n-InGaN electron reservoir layer, Journal of Applied Physics, vol.100, issue.11, p.113105, 2006. ,
Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers, Journal of Applied Physics, vol.117, issue.13, p.134501, 2015. ,
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency, Applied Physics Letters, vol.111, issue.26, p.262101, 2017. ,
Anharmonic behavior in microwave-driven resistivity oscillations in Hall bars, Applied Physics Letters, vol.90, issue.26, p.262101, 2007. ,
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells, Applied Physics Letters, vol.113, issue.11, p.111106, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01981711
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties, Journal of Crystal Growth, vol.507, pp.246-250, 2019. ,
High conductivity in Si-doped GaN wires, Applied Physics Letters, vol.102, issue.12, p.122116, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00843632
Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires, Applied Physics Letters, vol.103, issue.20, p.202101, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-00905599
Direct Imaging of p?n Junction in Core?Shell GaN Wires, Nano Letters, vol.14, issue.6, pp.3491-3498, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-00999730
Process for Catalyst-Free Selective Growth on a Semiconductor Structure, 2012. ,
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011. ,
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011. ,
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011. ,
Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations, Physical Review Letters, vol.116, issue.2, p.27, 2016. ,
Erratum: Self-Diffusion in Amorphous Silicon [Phys. Rev. Lett.116, 025901 (2016)], Physical Review Letters, vol.116, issue.8, p.27401, 2016. ,
Excitonic Diffusion in InGaN/GaN Core?Shell Nanowires, Nano Letters, vol.16, issue.1, pp.243-249, 2015. ,
Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence, Applied Physics Letters, vol.112, issue.5, p.052106, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01981682
Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates, Applied Physics Letters, vol.97, issue.15, p.151909, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00601864
Effects of exciton localization on internal quantum efficiency of InGaN nanowires, Journal of Applied Physics, vol.114, issue.15, p.153506, 2013. ,
Internal quantum efficiency of highly-efficient InxGa1?xN-based near-ultraviolet light-emitting diodes, Applied Physics Letters, vol.83, issue.24, pp.4906-4908, 2003. ,
Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core?Shell Nanorods, Crystal Growth & Design, vol.16, issue.4, pp.1907-1916, 2016. ,
Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation, Nanotechnology, vol.29, issue.10, p.105703, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01877690
Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls, Applied Physics Letters, vol.108, issue.4, p.042102, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01954240
Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN, Applied Physics Express, vol.2, p.041002, 2009. ,
Structure and Composition of Isolated Core-Shell(In,Ga)N/GaNRods Based on Nanofocus X-Ray Diffraction and Scanning Transmission Electron Microscopy, Physical Review Applied, vol.7, issue.2, p.24033, 2017. ,
Group III nitride core-shell nano- and microrods for optoelectronic applications, physica status solidi (RRL) - Rapid Research Letters, vol.7, issue.10, pp.800-814, 2013. ,
Group III nitride core-shell nano- and microrods for optoelectronic applications, physica status solidi (RRL) - Rapid Research Letters, vol.7, issue.10, pp.800-814, 2013. ,
Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires, Applied Physics Express, vol.12, issue.8, p.085003, 2019. ,
M-Plane GaN/InAlN Multiple Quantum Wells in Core?Shell Wire Structure for UV Emission, ACS Photonics, vol.1, issue.1, pp.38-46, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-01986748
Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure, Journal of Applied Physics, vol.123, issue.4, p.045103, 2018. ,
Understanding GaN/InGaN core?shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods, Nanotechnology, vol.28, issue.48, p.485601, 2017. ,
Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN, Physical Review Letters, vol.110, issue.3, p.36103, 2013. ,
Investigation of Photovoltaic Properties of Single Core?Shell GaN/InGaN Wires, ACS Applied Materials & Interfaces, vol.7, issue.39, pp.21898-21906, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01230123
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers, Journal of Crystal Growth, vol.300, issue.1, pp.70-74, 2007. ,
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers, Journal of Crystal Growth, vol.300, issue.1, pp.70-74, 2007. ,
, Optoelectronic Device, vol.30
Operating method of three-dimensional positioning device using moving characteristics of human arm, Journal of Advanced Mechanical Design, Systems, and Manufacturing, vol.12, issue.1, pp.JAMDSM0009-JAMDSM0009, 2018. ,
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells, Physical Review B, vol.94, issue.19, p.94, 2016. ,
Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition, Applied Physics Letters, vol.100, issue.8, p.082103, 2012. ,