Y. H. Ra, R. Navamathavan, S. Kang, and C. R. Lee, Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition, Journal of Materials Chemistry C, vol.2, issue.15, p.2692, 2014.

T. Schimpke, M. Mandl, I. Stoll, B. Pohl-klein, D. Bichler et al., Phosphor-converted white light from blue-emitting InGaN microrod LEDs, physica status solidi (a), vol.213, issue.6, pp.1577-1584, 2016.

F. Qian, Y. Li, S. Grade?ak, H. Park, Y. Dong et al., Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers, Nature Materials, vol.7, issue.9, pp.701-706, 2008.

D. Salomon, A. Dussaigne, M. Lafossas, C. Durand, C. Bougerol et al., Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications, Nanoscale Research Letters, vol.8, issue.1, pp.1-5, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00854179

R. Koester, J. S. Hwang, C. Durand, D. Le-si-dang, and J. Eymery, Self-assembled growth of catalyst-free GaN wires by metal?organic vapour phase epitaxy, Nanotechnology, vol.21, issue.1, p.015602, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00999293

P. M. Coulon, M. Mexis, M. Teisseire, M. Jublot, P. Vennéguès et al., Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties, Journal of Applied Physics, vol.115, issue.15, p.153504, 2014.

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, Threading defect elimination in GaN nanowires, Journal of Materials Research, vol.26, issue.17, pp.2293-2298, 2011.

S. D. Hersee, A. K. Rishinaramangalam, M. N. Fairchild, L. Zhang, and P. Varangis, Threading defect elimination in GaN nanowires, Journal of Materials Research, vol.26, issue.17, pp.2293-2298, 2011.

C. Tu, C. Liao, Y. Yao, H. Chen, C. Lin et al., Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array, Optics Express, vol.22, issue.S7, p.A1799, 2014.

N. Guan, X. Dai, A. Messanvi, H. Zhang, J. Yan et al., Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors, ACS Photonics, vol.3, issue.4, pp.597-603, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01320610

X. Dai, A. Messanvi, H. Zhang, C. Durand, J. Eymery et al., Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires, Nano Letters, vol.15, issue.10, pp.6958-6964, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01252043

H. Zhang, X. Dai, N. Guan, A. Messanvi, V. Neplokh et al., Flexible Photodiodes Based on Nitride Core/Shell p?n Junction Nanowires, ACS Applied Materials & Interfaces, vol.8, issue.39, pp.26198-26206, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01390933

K. Chung, H. Beak, Y. Tchoe, H. Oh, H. Yoo et al., Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes, APL Materials, vol.2, issue.9, p.092512, 2014.

M. Nami, A. Rashidi, M. Monavarian, S. Mishkat-ul-masabih, A. K. Rishinaramangalam et al., Electrically Injected GHz-Class GaN/InGaN Core?Shell Nanowire-Based ?LEDs: Carrier Dynamics and Nanoscale Homogeneity, ACS Photonics, vol.6, issue.7, pp.1618-1625, 2019.

M. S. Mohajerani, M. Müller, J. Hartmann, H. Zhou, N. H. Wehmann et al., Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes, Japanese Journal of Applied Physics, vol.55, issue.5S, p.05FJ09, 2016.

W. Lu, N. Sone, N. Goto, K. Iida, A. Suzuki et al., Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires, Nanoscale, vol.11, issue.40, pp.18746-18757, 2019.

W. Lu, M. Terazawa, D. Han, N. Sone, N. Goto et al., Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires, Nanophotonics, vol.9, issue.1, pp.101-111, 2019.

A. K. Rishinaramangalam, M. Nami, D. M. Shima, G. Balakrishnan, S. R. Brueck et al., Reduction of reverse-leakage current in selective-area-grown GaN-based core-shell nanostructure LEDs using AlGaN layers, physica status solidi (a), vol.214, issue.5, p.1600776, 2016.

M. Nami, I. E. Stricklin, K. M. Davico, S. Mishkat-ul-masabih, A. K. Rishinaramangalam et al., Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes, Scientific Reports, vol.8, issue.1, pp.1-11, 2018.

T. Schimpke, H. Lugauer, A. Avramescu, T. Varghese, A. Koller et al., Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, p.25, 2016.

T. Schimpke, H. Lugauer, A. Avramescu, T. Varghese, A. Koller et al., Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, p.97680, 2016.

K. Sugimoto, Y. Denpo, N. Okada, and K. Tadatomo, Effect of superlattice on light output power of InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities, physica status solidi (c), vol.13, issue.5-6, pp.270-273, 2016.

Q. Mu, M. Xu, X. Wang, Q. Wang, Y. Lv et al., Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells, Physica E: Low-dimensional Systems and Nanostructures, vol.76, pp.1-5, 2016.

M. J. Davies, P. Dawson, N. P. Massabuau, A. L. Fol, R. A. Oliver et al., A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures, physica status solidi (b), vol.252, issue.5, pp.866-872, 2014.

R. A. Oliver, M. J. Kappers, and C. J. Humphreys, A Study of the Inclusion of Prelayers in InGaN/GaN Single-and Multiple-Quantum-Well Structures. Phys. Status Solidi, vol.252, pp.866-872, 2015.

T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers, Applied Physics Letters, vol.85, issue.15, pp.3089-3091, 2004.

N. Otsuji, K. Fujiwara, and J. K. Sheu, Electroluminescence efficiency of blue InGaN?GaN quantum-well diodes with and without an n-InGaN electron reservoir layer, Journal of Applied Physics, vol.100, issue.11, p.113105, 2006.

A. M. Armstrong, B. N. Bryant, M. H. Crawford, D. D. Koleske, S. R. Lee et al., Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers, Journal of Applied Physics, vol.117, issue.13, p.134501, 2015.

C. Haller, J. F. Carlin, G. Jacopin, D. Martin, R. Butté et al., Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency, Applied Physics Letters, vol.111, issue.26, p.262101, 2017.

J. Iñarrea, Anharmonic behavior in microwave-driven resistivity oscillations in Hall bars, Applied Physics Letters, vol.90, issue.26, p.262101, 2007.

C. Haller, J. Carlin, G. Jacopin, W. Liu, D. Martin et al., GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells, Applied Physics Letters, vol.113, issue.11, p.111106, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01981711

F. Dominec, A. Hospodková, T. Hubá?ek, M. Zíková, J. Pangrác et al., Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties, Journal of Crystal Growth, vol.507, pp.246-250, 2019.

P. Tchoulfian, F. Donatini, F. Levy, B. Amstatt, P. Ferret et al., High conductivity in Si-doped GaN wires, Applied Physics Letters, vol.102, issue.12, p.122116, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00843632

P. Tchoulfian, F. Donatini, F. Levy, B. Amstatt, A. Dussaigne et al., Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires, Applied Physics Letters, vol.103, issue.20, p.202101, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00905599

P. Tchoulfian, F. Donatini, F. Levy, A. Dussaigne, P. Ferret et al., Direct Imaging of p?n Junction in Core?Shell GaN Wires, Nano Letters, vol.14, issue.6, pp.3491-3498, 2014.
URL : https://hal.archives-ouvertes.fr/hal-00999730

J. Eymery, D. Salomon, X. Chen, and C. Durand, Process for Catalyst-Free Selective Growth on a Semiconductor Structure, 2012.

R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller et al., Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011.

R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller et al., Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011.

R. R. Pelá, C. Caetano, M. Marques, L. G. Ferreira, J. Furthmüller et al., Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach, Applied Physics Letters, vol.98, issue.15, p.151907, 2011.

M. Auf-der-maur, A. Pecchia, G. Penazzi, W. Rodrigues, and A. Di-carlo, Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations, Physical Review Letters, vol.116, issue.2, p.27, 2016.

F. Strauß, L. Dörrer, T. Geue, J. Stahn, A. Koutsioubas et al., Erratum: Self-Diffusion in Amorphous Silicon [Phys. Rev. Lett.116, 025901 (2016)], Physical Review Letters, vol.116, issue.8, p.27401, 2016.

M. Shahmohammadi, J. D. Ganière, H. Zhang, R. Ciechonski, G. Vescovi et al., Excitonic Diffusion in InGaN/GaN Core?Shell Nanowires, Nano Letters, vol.16, issue.1, pp.243-249, 2015.

W. Liu, C. Mounir, G. Rossbach, T. Schimpke, A. Avramescu et al., Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence, Applied Physics Letters, vol.112, issue.5, p.052106, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01981682

X. J. Chen, G. Perillat-merceroz, D. Sam-giao, C. Durand, and J. Eymery, Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates, Applied Physics Letters, vol.97, issue.15, p.151909, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00601864

H. Murotani, Y. Yamada, T. Tabata, Y. Honda, M. Yamaguchi et al., Effects of exciton localization on internal quantum efficiency of InGaN nanowires, Journal of Applied Physics, vol.114, issue.15, p.153506, 2013.

S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki et al., Internal quantum efficiency of highly-efficient InxGa1?xN-based near-ultraviolet light-emitting diodes, Applied Physics Letters, vol.83, issue.24, pp.4906-4908, 2003.

E. D. Le-boulbar, P. R. Edwards, S. H. Vajargah, I. H. Griffiths, I. Gîrgel et al., Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core?Shell Nanorods, Crystal Growth & Design, vol.16, issue.4, pp.1907-1916, 2016.

F. Donatini and J. Pernot, Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation, Nanotechnology, vol.29, issue.10, p.105703, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01877690

L. Mancini, D. Hernández-maldonado, W. Lefebvre, J. Houard, I. Blum et al., Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls, Applied Physics Letters, vol.108, issue.4, p.042102, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01954240

A. M. Fischer, Z. Wu, K. Sun, Q. Wei, Y. Huang et al., Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown onm-Plane GaN, Applied Physics Express, vol.2, p.041002, 2009.

T. Krause, M. Hanke, L. Nicolai, Z. Cheng, M. Niehle et al., Structure and Composition of Isolated Core-Shell(In,Ga)N/GaNRods Based on Nanofocus X-Ray Diffraction and Scanning Transmission Electron Microscopy, Physical Review Applied, vol.7, issue.2, p.24033, 2017.

M. Mandl, X. Wang, T. Schimpke, C. Kölper, M. Binder et al., Group III nitride core-shell nano- and microrods for optoelectronic applications, physica status solidi (RRL) - Rapid Research Letters, vol.7, issue.10, pp.800-814, 2013.

M. Mandl, X. Wang, T. Schimpke, C. Kölper, M. Binder et al., Group III nitride core-shell nano- and microrods for optoelectronic applications, physica status solidi (RRL) - Rapid Research Letters, vol.7, issue.10, pp.800-814, 2013.

W. Yi, J. Uzuhashi, J. Chen, T. Kimura, S. Kamiyama et al., Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires, Applied Physics Express, vol.12, issue.8, p.085003, 2019.

C. Durand, C. Bougerol, J. F. Carlin, G. Rossbach, F. Godel et al., M-Plane GaN/InAlN Multiple Quantum Wells in Core?Shell Wire Structure for UV Emission, ACS Photonics, vol.1, issue.1, pp.38-46, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01986748

C. X. Ren, F. Tang, R. A. Oliver, and T. Zhu, Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure, Journal of Applied Physics, vol.123, issue.4, p.045103, 2018.

C. Tessarek, S. Rechberger, C. Dieker, M. Heilmann, E. Spiecker et al., Understanding GaN/InGaN core?shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods, Nanotechnology, vol.28, issue.48, p.485601, 2017.

T. Markurt, L. Lymperakis, J. Neugebauer, P. Drechsel, P. Stauss et al., Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN, Physical Review Letters, vol.110, issue.3, p.36103, 2013.

A. Messanvi, H. Zhang, V. Neplokh, F. H. Julien, F. Bayle et al., Investigation of Photovoltaic Properties of Single Core?Shell GaN/InGaN Wires, ACS Applied Materials & Interfaces, vol.7, issue.39, pp.21898-21906, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01230123

M. J. Kappers, R. Datta, R. A. Oliver, F. D. Rayment, M. E. Vickers et al., Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers, Journal of Crystal Growth, vol.300, issue.1, pp.70-74, 2007.

M. J. Kappers, R. Datta, R. A. Oliver, F. D. Rayment, M. E. Vickers et al., Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers, Journal of Crystal Growth, vol.300, issue.1, pp.70-74, 2007.

P. Gilet, A. Dussaigne, D. Salomon, J. Eymery, and C. Durand, Optoelectronic Device, vol.30

M. Komori, T. Uchida, K. Kobayashi, and T. Tashiro, Operating method of three-dimensional positioning device using moving characteristics of human arm, Journal of Advanced Mechanical Design, Systems, and Manufacturing, vol.12, issue.1, pp.JAMDSM0009-JAMDSM0009, 2018.

W. Liu, R. Butté, A. Dussaigne, N. Grandjean, B. Deveaud et al., Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells, Physical Review B, vol.94, issue.19, p.94, 2016.

T. A. Henry, A. Armstrong, K. M. Kelchner, S. Nakamura, S. P. Denbaars et al., Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition, Applied Physics Letters, vol.100, issue.8, p.082103, 2012.