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Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls

Akanksha Kapoor 1 Sylvain Finot 2 Vincent Grenier 1 Eric Robin 3 Catherine Bougerol 4 Joël Bleuse 1 Gwenolé Jacopin 2 J. Eymery 5 Christophe Durand 1
1 NPSC - Nanophysique et Semiconducteurs
PHELIQS - PHotonique, ELectronique et Ingénierie QuantiqueS : DRF/IRIG/PHELIQS
3 LEMMA - Laboratoire d'Etude des Matériaux par Microscopie Avancée
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
5 NRS - Nanostructures et Rayonnement Synchrotron
MEM - Modélisation et Exploration des Matériaux : DRF/IRIG/MEM
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Submitted on : Tuesday, November 10, 2020 - 9:25:52 AM
Last modification on : Tuesday, November 24, 2020 - 4:00:19 PM

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Akanksha Kapoor, Sylvain Finot, Vincent Grenier, Eric Robin, Catherine Bougerol, et al.. Role of Underlayer for Efficient Core–Shell InGaN QWs Grown on m-plane GaN Wire Sidewalls. ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (16), pp.19092-19101. ⟨10.1021/acsami.9b19314⟩. ⟨cea-02540566⟩

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