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Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film

Abstract : We describe a process for transferring a 200 nm thick, 200 mm wide monocrystalline silicon (mono c-Si) thin film from a silicon-on-insulator onto a flexible polymer substrate. The result is a stretchable and flexible ultra-thin semiconductor film that can be subjected to tensile stress experiments. The process uses off-the-shelf 200 mm wafers and standard polymer temporary bonding techniques. The backside substrate and buried oxide are removed using grinding and wet etching processes. No cracks or wrinkles are observed on the film prior to the tensile stress experiments. The stretching of the flexible structure results in up to 1.5% uniaxial tensile elastic strain on the thin mono c-Si film.
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https://hal-cea.archives-ouvertes.fr/cea-02534522
Contributor : Samuel Tardif <>
Submitted on : Tuesday, April 7, 2020 - 10:11:23 AM
Last modification on : Wednesday, October 14, 2020 - 3:49:44 AM

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Laurent Michaud, Clément Castan, Marc Zussy, Pierre Montméat, Vincent Mareau, et al.. Elaboration and characterization of a 200 mm stretchable and flexible ultra-thin semi-conductor film. Nanotechnology, Institute of Physics, 2020, 31 (14), pp.145302. ⟨10.1088/1361-6528/ab647a⟩. ⟨cea-02534522⟩

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