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Attosecond-fast internal photoemission

Abstract : The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission1,2,3. Here an electron is photoemitted from a metal into a semiconductor4,5. While the photoelectric effect takes place within less than 100 attoseconds (1 as = 10−18 seconds)6,7, the attosecond timescale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON—CHAMELEON—we show that the atomically thin semimetal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 ± 200) as. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz (1 PHz = 1015 Hz) for the charge transfer rate, this semimetal/semiconductor interface represents a functional solid-state interface offering the speed and design space required for future light-wave signal processing.
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https://hal-cea.archives-ouvertes.fr/cea-02462468
Contributor : Maria Kholodtsova <>
Submitted on : Friday, January 31, 2020 - 1:06:27 PM
Last modification on : Saturday, February 1, 2020 - 1:43:58 AM

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Christian Heide, Martin Hauck, Takuya Higuchi, Jürgen Ristein, Lothar Ley, et al.. Attosecond-fast internal photoemission. Nature Photonics, Nature Publishing Group, 2020, ⟨10.1038/s41566-019-0580-6⟩. ⟨cea-02462468⟩

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