Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects - Archive ouverte HAL Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2015

Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects

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Abstract

In this paper we investigate the effect of disorder on highly correlated electron systems, which exhibit metal-insulator transition (MIT) and structural-phase transition (SPT). We show that the effect of ion irradiation is strikingly different between V2O3 and VO2, two otherwise similar materials. Upon irradiation, the MIT and SPT temperatures in V2O3 decrease drastically at low absolute dosages, much lower than for VO2.At a low threshold dose, the insulating state of V2O3 drastically collapses into a metallic state. Contrary to this, irradiation of VO2 leads to a much milder reduction of the MIT and SPT temperatures and to a weak, gradual decrease of the insulating state resistivity—not suppressed even at one order of magnitude higher doses than the v2O3 thresh v2O3 arises from global (rather than local as in VO2) physical mechanisms that are extremely sensitive to disorder. This shows that the MIT and SPT may have substantially different physical origins in different systems, with the consequent major implications for theoretical descriptions of the MIT in highly correlated electron systems.

Dates and versions

cea-02384456 , version 1 (28-11-2019)

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Juan Gabriel Ramirez, Thomas Saerbeck, Siming Wang, J. Trastoy, M. Malnou, et al.. Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (20), ⟨10.1103/PhysRevB.91.205123⟩. ⟨cea-02384456⟩
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