Study of damage in ion-irradiated et945;-SiC by opticalspectroscopy - Archive ouverte HAL Access content directly
Journal Articles Journal of Physics: Condensed Matter Year : 2006

Study of damage in ion-irradiated et945;-SiC by opticalspectroscopy

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Abstract

UVvisible absorption and Raman scattering spectroscopy were used to investigate the effects of 4 MeV Xe-ion and 4 MeV Au-ion irradiations onet945;-SiC single crystals. The evolution of transmission spectra upon irradiation evidences an increase of the optical absorption. The optical band-gap energy decreases versus fluence, which is linked to band-gap closure attributed to the creation of localized states into the forbidden energy band. A strong effect of theirradiation temperature is observed as a result of dynamic annealing enhanced by the temperature increase. The Urbach energy increases versus fluence due to disorder accumulation in the damaged layer. Comparison of Urbach energyand disorder parameters extracted from Raman spectra shows that the Urbach energy is sensitive to the disorder induced by the accumulation of point defects.
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Dates and versions

cea-02359303 , version 1 (12-11-2019)

Identifiers

  • HAL Id : cea-02359303 , version 1

Cite

S. Sorieul, Jm. Costantini, L. Gosmain, G. Calas, Jj. Grob, et al.. Study of damage in ion-irradiated et945;-SiC by opticalspectroscopy. Journal of Physics: Condensed Matter, 2006, 18. ⟨cea-02359303⟩
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