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MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric

Hugo Casademont 1 Laure Fillaud 1 Xavier Lefèvre 1 Renaud Cornut 1 Bruno Jousselme 1 Vincent Derycke 1
1 LICSEN - Laboratoire Innovation en Chimie des Surfaces et NanoSciences
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02351410
Contributor : Serge Palacin <>
Submitted on : Wednesday, November 6, 2019 - 1:40:09 PM
Last modification on : Monday, February 10, 2020 - 6:13:58 PM

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  • HAL Id : cea-02351410, version 1

Citation

Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨cea-02351410⟩

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