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MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric

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https://hal-cea.archives-ouvertes.fr/cea-02351410

Submitted on : Wednesday, November 6, 2019-1:40:09 PM

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cea-02351410 , version 1 (06-11-2019)

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  • HAL Id : cea-02351410 , version 1

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Hugo Casademont, Laure Fillaud, Xavier Lefèvre, Renaud Cornut, Bruno Jousselme, et al.. MoS2 Transistors with Electrografted Organic Ultrathin Film as Efficient Gate Dielectric. E-MRS 2016 Spring Meeting, May 2016, Lille, France. ⟨cea-02351410⟩

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CEA CNRS PUBNIMBE INC-CNRS IRAMIS-NIMBE CEA-UPSAY UNIV-PARIS-SACLAY GS-ENGINEERING IRAMIS GS-CHIMIE INSTITUT-SCIENCES-LUMIERE
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