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H. Casademont, Y. Lin, R. Cornut, B. Jousselme, and V. Derycke, SEM image and schematic representation of a transistor using a hydrophobic organic electro-grafted thin film (4-7 nm) as gate dielectric and mechanically exfoliated MoS 2 as channel. Transfer characteristic at V DS =0.5V. SEM image of individual single