Low-temperature deposition of transparent conductive layers for perovskite-silicon tandem cells
Abstract
Since 2013, single-junction research-cell power conversion efficiencies of perovskite cells have risen by about 8%$_{abs}$ to 22.1%, while multicrystalline silicon and monocrystalline silicon efficiencies have risen by less than 2% abs and less than 1% abs , respectively Tandem cells with a perovskite top cell and a silicon bottom cell, recently achieving 23.6% in two-terminal configuration, present a promising alternative to further increase the relatively stagnant performance of already highly-optimized single-junction silicon cells. To facilitate such an advance, methods to deposit high-quality transparent conductors (TCs) which do not subject the perovskite layer to degradation during deposition need to be found. We utilize a spin-coating solution deposition process optimized for high reproducibility, yielding the single-junction MAPbl$_{3-x}$ Cl x perovskite cell stack shown in Figure 1, with an average efficiency of 7.94 $\pm$ 0.68 % with a non-transparent electrode. Two different TC electrodes are tested on these cells: evaporated thin-film semi-transparent Ag layers and low-temperature RF-sputtered indium tin oxide layers. For the latter, buffer layers of either thin-film Ag, Ag/BCP, Ag nanowires or interlinked PCBM are used to protect the organic layer stack from sputtering damage. By comparing transparency and efficiency, we will identify the most suitable approach
Domains
Material chemistry
Origin : Files produced by the author(s)
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