Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001)

E. Maras (1) , Laurent Pizzagalli (2) , T. Ala-Nissila (3) , H. Jonsson (4)

1 CEA-DES (ex-DEN) - CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire)
2 PPrime [Poitiers] - Institut Pprime [UPR 3346]
3 Aalto University School of Science - Department of Applied Physics and COMP CoE
4 Division of Energy and Mechanical Engineering Department of Technology and Built Environment

Domaines: Physique Nucléaire Expérimentale [nucl-ex]; Physique Nucléaire Théorique [nucl-th]

E. Maras, Laurent Pizzagalli, T. Ala-Nissila, H. Jonsson. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001). Scientific Reports, 2017, 7, ⟨10.1038/s41598-017-12009-y⟩. ⟨cea-02339914⟩