Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001) - Archive ouverte HAL Access content directly
Journal Articles Scientific Reports Year : 2017

Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001)

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cea-02339914 , version 1 (30-10-2019)

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E. Maras, Laurent Pizzagalli, T. Ala-Nissila, H. Jonsson. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001). Scientific Reports, 2017, 7, ⟨10.1038/s41598-017-12009-y⟩. ⟨cea-02339914⟩
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