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Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001)

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https://hal-cea.archives-ouvertes.fr/cea-02339914
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Submitted on : Wednesday, October 30, 2019 - 3:44:25 PM
Last modification on : Wednesday, October 21, 2020 - 3:08:02 PM

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E. Maras, Laurent Pizzagalli, T. Ala-Nissila, H. Jonsson. Atomic Scale Formation Mechanism of Edge Dislocation Relieving Lattice Strain in a GeSioverlayer on Si(001). Scientific Reports, Nature Publishing Group, 2017, 7, ⟨10.1038/s41598-017-12009-y⟩. ⟨cea-02339914⟩

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