Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers - Archive ouverte HAL Access content directly
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Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers

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cea-02339728 , version 1 (30-10-2019)

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  • HAL Id : cea-02339728 , version 1

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Pierfrancesco Aversa, Heejae Lee, Minjin Kim, Olivier Plantevin, Olivier Cavani, et al.. Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers. International Conference on Perovskite Thin Film Photovoltaics (ABXPV18), Feb 2018, Rennes, France. ⟨cea-02339728⟩
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