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Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers

Pierfrancesco Aversa 1 Heejae Lee 2 Minjin Kim 2 Olivier Plantevin 3 Olivier Cavani 1 Nadège Ollier 1 Bernard Geffroy 2, 4 Catherine Corbel 1 
1 LSI - Laboratoire des Solides Irradiés
2 LPICM - Laboratoire de physique des interfaces et des couches minces [Palaiseau]
3 LPS - Laboratoire de Physique des Solides
4 LICSEN - Laboratoire Innovation en Chimie des Surfaces et NanoSciences
NIMBE UMR 3685 - Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M)
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Conference papers
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https://hal-cea.archives-ouvertes.fr/cea-02339728
Contributor : Serge Palacin Connect in order to contact the contributor
Submitted on : Wednesday, October 30, 2019 - 3:15:35 PM
Last modification on : Saturday, June 25, 2022 - 10:40:44 PM

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  • HAL Id : cea-02339728, version 1

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CEA | X | CNRS | X-LSI | X-PICM | X-DEP-PHYS | LPICM | PUBNIMBE | INC-CNRS | IRAMIS-NIMBE | CEA-UPSAY | UNIV-PARIS-SACLAY | LRN | GS-ENGINEERING | IRAMIS | GS-CHIMIE | INSTITUT-SCIENCES-LUMIERE | LPSO

Citation

Pierfrancesco Aversa, Heejae Lee, Minjin Kim, Olivier Plantevin, Olivier Cavani, et al.. Effect of Defect Production on Photoluminescence Properties in He ion Implanted Methylammonium Lead Tri-Iodide Perovskite Layers. International Conference on Perovskite Thin Film Photovoltaics (ABXPV18), Feb 2018, Rennes, France. ⟨cea-02339728⟩

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