Doping profile extraction in thin SOI films: application to A2RAM

F Tcheme Wakam (1) , J. Lacord (1) , M. Bawedin (2) , S. Martinie (1) , S. Cristoloveanu (2) , G. Ghibaudo (2) , J.-Ch Barbé (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation

We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.

Keywords: A2RAM; C-V characteristic; SOI; electrical characterization; doping profile

Domains: Engineering Sciences [physics]; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

F Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, et al.. Doping profile extraction in thin SOI films: application to A2RAM. EuroSOI-ULIS 2018, Mar 2018, Granada, Spain. ⟨cea-02270895⟩