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Doping profile extraction in thin SOI films: application to A2RAM

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Abstract

We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.
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Dates and versions

cea-02270895 , version 1 (26-08-2019)

Identifiers

  • HAL Id : cea-02270895 , version 1

Cite

F Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, et al.. Doping profile extraction in thin SOI films: application to A2RAM. EuroSOI-ULIS 2018, Mar 2018, Granada, Spain. ⟨cea-02270895⟩
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