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Doping profile extraction in thin SOI films: application to A2RAM

F Tcheme Wakam 1, * J. Lacord 1 M. Bawedin 2 S. Martinie 1 S. Cristoloveanu 2 G. Ghibaudo 2 J.-Ch Barbé 1 
* Corresponding author
1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
Abstract : We propose for the first time a method based on C-V measurement to extract the bridge doping profile which governs the A2RAM performances. Assessed with TCAD simulation and simple extraction model adapted from bulk devices, this technique is validated with experimental data.
Keywords : A2RAM C-V characteristic SOI electrical characterization doping profile
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Submitted on : Monday, August 26, 2019 - 1:40:23 PM
Last modification on : Wednesday, November 3, 2021 - 6:01:34 AM
Long-term archiving on: : Friday, January 10, 2020 - 4:24:28 AM

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  • HAL Id : cea-02270895, version 1

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F Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, et al.. Doping profile extraction in thin SOI films: application to A2RAM. EuroSOI-ULIS 2018, Mar 2018, Granada, Spain. ⟨cea-02270895⟩

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