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Z²-FET DC hysteresis: deep understanding and preliminary model

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Abstract

Z²-FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z²-FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z²-FET operation has not been proposed yet. In this paper, we provide a detailed description of the Z²-FET DC behavior based on TCAD simulations and propose corresponding analytical modeling.
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Dates and versions

cea-02270891 , version 1 (26-08-2019)

Identifiers

  • HAL Id : cea-02270891 , version 1

Cite

J. Lacord, S. Martinie, M.-S Parihar, K Lee, M Bawedin, et al.. Z²-FET DC hysteresis: deep understanding and preliminary model. SISPAD 2017, Sep 2017, Kamakura, Japan. ⟨cea-02270891⟩
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