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Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation

Abstract : Silicon nitride spacer etching is one of the most critical step for the fabrication of CMOS transistors in microelectronics. It is usually done by plasma etching using a fluorocarbon based chemistry. However, from the 14 nm technology node and beyond, this etching process no longer allows the etch specifications to be reached (nonformation of a foot, poor critical dimension control below 1 nm). To overcome this issue, a new process was developed. It consists of two steps in a first step, the silicon nitride film is modified by light ion implantation (hydrogen), and then followed by a removal step of this modified film by hydrofluoric acid (HF). In this paper, the authors propose to remove the implanted/modified silicon nitride using gaseous HF and understand the associated etching mechanisms using infrared spectroscopy and x-ray photoelectron spectroscopy at different stages of the process sequence (after implantation/modification, gaseous HF process, and post-treatment).
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https://hal-cea.archives-ouvertes.fr/cea-02202455
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 31, 2019 - 4:35:39 PM
Last modification on : Thursday, June 11, 2020 - 5:04:10 PM

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Vincent Ah-Leung, Olivier Pollet, Nicolas Posseme, Maxime Garcia Barros, Névine Rochat, et al.. Understanding of a new approach for silicon nitride spacer etching using gaseous hydrofluoric acid after hydrogen ion implantation. Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (2), pp.021408. ⟨10.1116/1.4977077⟩. ⟨cea-02202455⟩

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