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Journal Articles Scientific Reports Year : 2017

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

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Abstract

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.

Dates and versions

cea-02202449 , version 1 (31-07-2019)

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Yannick Baines, Julien Buckley, Jerome Biscarrat, Gennie Garnier, Matthew Charles, et al.. Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact. Scientific Reports, 2017, 7, pp.8177. ⟨10.1038/s41598-017-08307-0⟩. ⟨cea-02202449⟩
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