Skip to Main content Skip to Navigation
Journal articles

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Abstract : Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.
Document type :
Journal articles
Complete list of metadatas

https://hal-cea.archives-ouvertes.fr/cea-02202449
Contributor : Marianne Leriche <>
Submitted on : Wednesday, July 31, 2019 - 4:35:24 PM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM

Links full text

Identifiers

Collections

Citation

Yannick Baines, Julien Buckley, Jerome Biscarrat, Gennie Garnier, Matthew Charles, et al.. Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact. Scientific Reports, Nature Publishing Group, 2017, 7, pp.8177. ⟨10.1038/s41598-017-08307-0⟩. ⟨cea-02202449⟩

Share

Metrics

Record views

78