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Journal articles
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
Abstract : Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.
https://hal-cea.archives-ouvertes.fr/cea-02202449
Contributor : Marianne Leriche Connect in order to contact the contributor
Submitted on : Wednesday, July 31, 2019 - 4:35:24 PM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM
Contributor : Marianne Leriche Connect in order to contact the contributor
Submitted on : Wednesday, July 31, 2019 - 4:35:24 PM
Last modification on : Thursday, June 11, 2020 - 5:04:09 PM
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